參數(shù)資料
型號: S-80728AN-DR-S
元件分類: 電源管理
英文描述: 1-CHANNEL POWER SUPPLY SUPPORT CKT, PSSO3
封裝: SOT-89, 3 PIN
文件頁數(shù): 39/40頁
文件大?。?/td> 454K
代理商: S-80728AN-DR-S
HIGH-PRECISION VOLTAGE DETECTOR
S-807 Series
Seiko Instruments Inc.
7
n
n Electrical Characteristics
1.
S-80715AL-AC-X, S-80715AN-DC-X (Detection voltage : 1.464 to 1.536 V)
(Unless otherwise specified : Ta=25
°C)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Test
circuit
Detection voltage
-VDET
1.464
1.500
1.536
V
1
Hysteresis width
VHYS
-VDET
×0.02
-VDET
×0.05
-VDET
×0.08
V
1
Current consumption
ISS
VDD = 3.0 V
1.4
3.5
A
2
Operating voltage
VDD
1.0
15.0
V
1
Output current
IOUT
Nch
VDS = 0.5 V
VDD = 1.2 V
0.23
0.50
mA
3
Pch
(CMOS
output)
VDS = 0.5 V
VDD = 4.8 V
0.36
0.62
4
Temperature
characteristic of -
VDET
Ta=-30
°C to 80°C
±0.19
mV/
°C
2.
S-80716AL-AD-X, S-80716AN/AN-DD-X (Detection voltage : 1.561 to 1.639 V)
(Unless otherwise specified : Ta=25
°C)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Test
circuit
Detection voltage
-VDET
1.561
1.600
1.639
V
1
Hysteresis width
VHYS
-VDET
×0.02
-VDET
×0.05
-VDET
×0.08
V
1
Current consumption
ISS
VDD = 3.0 V
1.4
3.5
A
2
Operating voltage
VDD
1.0
15.0
V
1
Output current
IOUT
Nch
VDS = 0.5 V
VDD = 1.2 V
0.23
0.50
mA
3
Pch
(CMOS
output)
VDS = 0.5 V
VDD = 4.8 V
0.36
0.62
4
Temperature
characteristic of -
VDET
Ta=-30
°C to 80°C
±0.20
mV/
°C
3.
S-80717AL/AL-AE-X, S-80717AN/AN-DE-X, S-80717SN-DE-X (Detection voltage : 1.659 to 1.741 V)
(Unless otherwise specified : Ta=25
°C)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Test
circuit
Detection voltage
-VDET
1.659
1.700
1.741
V
1
Hysteresis width
VHYS
-VDET
×0.02
-VDET
×0.05
-VDET
×0.08
V
1
Current consumption
ISS
VDD = 3.0 V
1.4
3.5
A
2
Operating voltage
VDD
1.0
15.0
V
1
Output current
IOUT
Nch
VDS = 0.5 V
VDD = 1.2 V
0.23
0.50
mA
3
Pch
(CMOS
output)
VDS = 0.5 V
VDD = 4.8 V
0.36
0.62
4
Temperature
characteristic of -
VDET
Ta=-30
°C to 80°C
±0.21
mV/
°C
-V
DET
Ta
-V
DET
Ta
-V
DET
Ta
DISCONTINUED
PRODUCT
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