參數(shù)資料
型號(hào)： S10140-1007
廠商： Hamamatsu Photonics
英文描述： CCD area image sensor Low readout noise, high resolution (pixel size: 12 レm)
中文描述： 防治荒漠化領(lǐng)域的圖像傳感器讀出低噪音，高清晰度（像素尺寸：12レ米）
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 206K
代理商： S10140-1007
S10140/S10141 series is a family of back-thinned FFT-CCD image sensors specifically designed for low-light-level detection in scientific
applications. By using the binning operation, S10140/S0141 series can be used as a linear image sensor having a long aperture in the direction of
the device length. This makes S10140/S10141 series ideally suited for use in spectrophotometry. The binning operation offers significant
improvement in S/N and signal processing speed compared with conventional methods by which signals are digitally added by an external circuit.
S10140/S10141 series also features low noise and low dark signal (MPP mode operation). This enables low-light-level detection and long
integration time, thus achieving a wide dynamic range.
S10140/S10141 series has an effective pixel size of 12 × 12 μm and is available in image areas ranging from 12.288 (H) × 1.464 (V) mm
2
(1024 ×
122 pixels) up to a large image area of 24.576 (H) × 6.072 (V) mm
2
(2048 × 506 pixels).
Features
l
Low readout noise: 4 e-rms Typ.
l
High resolution: pixel size 12 × 12 μm
l
Non-cooled type: S10140 series
One-stage TE-cooled type: S10141 series
l
Line, pixel binning, area scanning
l
Greater than 90 % quantum efficiency at peak sensitivity
wavelength
l
Wide spectral response range
l
Wide dynamic range
l
MPP operation
l
High UV sensitivity with good stability
l
Same pin connections as S7030/S7031 series
Applications
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Fluorescence spectrometer, ICP
l
Industrial inspection requiring
l
Semiconductor inspection
l
DNA sequencer
l
Low-light-level detection
I M A G E S E N S O R
CCD area image sensor
S10140/S10141 series
Low readout noise, high resolution (pixel size: 12 μm)
I
Selection guide
Type No.
Cooling
Number of total
pixels
Number of active
pixels
Active area
[mm (H) × mm (V)]
Suitable
multichannel
detector head
S10140-1007
S10140-1008
S10140-1009
S10140-1107
S10140-1108
S10140-1109
S10141-1007S
S10141-1008S
S10141-1009S
S10141-1107S
S10141-1108S
S10141-1109S
1044 × 128
1044 × 256
1044 × 512
2068 × 128
2068 × 256
2068 × 512
1044 × 128
1044 × 256
1044 × 512
2068 × 128
2068 × 256
2068 × 512
1024 × 122
1024 × 250
1024 × 506
2048 × 122
2048 × 250
2048 × 506
1024 × 122
1024 × 250
1024 × 506
2048 × 122
2048 × 250
2048 × 506
12.288 × 1.464
12.288 × 3.000
12.288 × 6.072
24.576 × 1.464
24.576 × 3.000
24.576 × 6.072
12.288 × 1.464
12.288 × 3.000
12.288 × 6.072
24.576 × 1.464
24.576 × 3.000
24.576 × 6.072
Non-cooled
C10150
One-stage
TE-cooled
C10151
I
General ratings
Parameter
S10140 series
S10141 series
Pixel size
Vertical clock phase
Horizontal clock phase
Output circuit
Package
Window *
1
*1: Window-less is available upon request.
12 (H) × 12 (V) μm
2 phases
2 phases
One-stage MOSFET source follower
24 pin ceramic DIP (refer to dimensional outlines)
Quartz glass
AR-coated sapphire
1
相關(guān)PDF資料
PDF描述
S10140-1008 CCD area image sensor Low readout noise, high resolution (pixel size: 12 レm)
S10140-1009 Diode; Antenna switching; VR (V): 30; IF (mA): 100; Pd (mW): 100; rf (ohm) max: 1.3; Condition IF at rf (mA): 10; Condition f at rf (MHz): 100; VF (V) max: 1; Condition IF at VF (mA): 10; C (pF) max: 0.35; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: MFP12
S10140-1107 CCD area image sensor Low readout noise, high resolution (pixel size: 12 レm)
S10140-1108 CCD area image sensor Low readout noise, high resolution (pixel size: 12 レm)
S10140-1109 Diode; Antenna switching; VR (V): 30; IF (mA): 100; Pd (mW): 100; rf (ohm) max: 2.5 1.5; Condition IF at rf (mA): 2 10; Condition f at rf (MHz): 100; VF (V) max: 1; Condition IF at VF (mA): 10; C (pF) max: 0.31; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: MFP12
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