型號 廠商 描述
s0301l
2 3 4 5 6 7 8 9 10 11 12		 SCRs 1-70 AMPS NON-SENSITIVE GATE
s0303l
2 3 4 5 6 7 8 9 10 11 12		 SCRs 1-70 AMPS NON-SENSITIVE GATE
s0304n1
2 3 4 5 6 7 8 9 10 11 12		 SCRs 1-70 AMPS NON-SENSITIVE GATE
s1004f1
2 3 4 5 6 7 8 9 10 11 12		 SCRs 1-70 AMPS NON-SENSITIVE GATE
s1006f1
2 3 4 5 6 7 8 9 10 11 12		 Circular Connector; No. of Contacts:26; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:16; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:16-26
s1001l
2 3 4 5 6 7 8 9 10 11 12		 SCRs 1-70 AMPS NON-SENSITIVE GATE
s1003l
2 3 4 5 6 7 8 9 10 11 12		 SCRs 1-70 AMPS NON-SENSITIVE GATE
s1004n1
2 3 4 5 6 7 8 9 10 11 12		 SCRs 1-70 AMPS NON-SENSITIVE GATE
s1006l
2 3 4 5 6 7 8 9 10 11 12		 SC Series, 15 Ohms, 1.0 W, Fixed, Wirewound Resistor
s1008f1
2 3 4 5 6 7 8 9 10 11 12		 SCRs 1-70 AMPS NON-SENSITIVE GATE
s1008r
2 3 4 5 6 7 8 9 10 11 12		 SCRs 1-70 AMPS NON-SENSITIVE GATE
s1010l
2 3 4 5 6 7 8 9 10 11 12		 SCRs 1-70 AMPS NON-SENSITIVE GATE
s1012l
2 3 4 5 6 7 8 9 10 11 12		 SCRs 1-70 AMPS NON-SENSITIVE GATE
s1015l
2 3 4 5 6 7 8 9 10 11 12		 SCRs 1-70 AMPS NON-SENSITIVE GATE
s101e
2 3 4 5 6 7 8 9 10 11 12		 SCRs 1-70 AMPS NON-SENSITIVE GATE
s1020l
2 3 4 5 6 7 8 9 10 11 12		 SCRs 1-70 AMPS NON-SENSITIVE GATE
s1025l
2 3 4 5 6 7 8 9 10 11 12		 SCRs 1-70 AMPS NON-SENSITIVE GATE
s1025r
2 3 4 5 6 7 8 9 10 11 12		 SCRs 1-70 AMPS NON-SENSITIVE GATE
s1070w
2 3 4 5 6 7 8 9 10 11 12		 SCRs 1-70 AMPS NON-SENSITIVE GATE
s1035w
2 3 4 5 6 7 8 9 10 11 12		 SCRs 1-70 AMPS NON-SENSITIVE GATE
s1050j
2 3 4 5 6 7 8 9 10 11 12		 SCRs 1-70 AMPS NON-SENSITIVE GATE
s1055w
2 3 4 5 6 7 8 9 10 11 12		 SCRs 1-70 AMPS NON-SENSITIVE GATE
s1065j
2 3 4 5 6 7 8 9 10 11 12		 SCRs 1-70 AMPS NON-SENSITIVE GATE
s1065p
2 3 4 5 6 7 8 9 10 11 12		 SCRs 1-70 AMPS NON-SENSITIVE GATE
s10108
2 3		 Hamamatsu Photonics For flame eye/using photo IC diode (RoHS compliance) instead of CdS cell
s10128
2 3 4 5 6 7		 Hamamatsu Photonics Diode; Antenna switching; VR (V): 30; IF (mA): 100; Pd (mW): 100; rf (ohm) max: 2; Condition IF at rf (mA): 2; Condition f at rf (MHz): 100; VF (V) max: 0.9; Condition IF at VF (mA): 2; C (pF) max: 0.35; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: EFP
s10140
2 3 4 5 6 7 8		 Hamamatsu Photonics Diode; Antenna switching; VR (V): 30; IF (mA): 100; Pd (mW): 100; rf (ohm) max: 1.3; Condition IF at rf (mA): 10; Condition f at rf (MHz): 100; VF (V) max: 1; Condition IF at VF (mA): 10; C (pF) max: 0.35; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: MFP12
s10140-1007
2 3 4 5 6 7 8		 Hamamatsu Photonics CCD area image sensor Low readout noise, high resolution (pixel size: 12 レm)
s10140-1008
2 3 4 5 6 7 8		 Hamamatsu Photonics CCD area image sensor Low readout noise, high resolution (pixel size: 12 レm)
s10140-1009
2 3 4 5 6 7 8		 Hamamatsu Photonics Diode; Antenna switching; VR (V): 30; IF (mA): 100; Pd (mW): 100; rf (ohm) max: 1.3; Condition IF at rf (mA): 10; Condition f at rf (MHz): 100; VF (V) max: 1; Condition IF at VF (mA): 10; C (pF) max: 0.35; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: MFP12
s10140-1107
2 3 4 5 6 7 8		 Hamamatsu Photonics CCD area image sensor Low readout noise, high resolution (pixel size: 12 レm)
s10140-1108
2 3 4 5 6 7 8		 Hamamatsu Photonics CCD area image sensor Low readout noise, high resolution (pixel size: 12 レm)
s10140-1109
2 3 4 5 6 7 8		 Hamamatsu Photonics Diode; Antenna switching; VR (V): 30; IF (mA): 100; Pd (mW): 100; rf (ohm) max: 2.5 1.5; Condition IF at rf (mA): 2 10; Condition f at rf (MHz): 100; VF (V) max: 1; Condition IF at VF (mA): 10; C (pF) max: 0.31; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: MFP12
s10141-1007s
2 3 4 5 6 7 8		 Hamamatsu Photonics Diode; Antenna switching; VR (V): 30; IF (mA): 100; Pd (mW): 100; rf (ohm) max: 1.3 (RKP200KP Faction) 2.0 (RKP201KN Faction); Condition IF at rf (mA): 10 (RKP200KP Faction) 2 (RKP201KN Faction); Condition f at rf (MHz): 100; VF (V) max: 1.0 (RKP200KP Faction) 0.9 (RKP201KN Faction); Condition IF at VF (mA): 10 (RKP200KP Faction) 2 (RKP201KN Faction); C (pF) max: 0.35; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: MFP12
s10141-1008s
2 3 4 5 6 7 8		 Hamamatsu Photonics low readout noise,high resolution(pixel size:12um)
s10141-1009s
2 3 4 5 6 7 8		 Hamamatsu Photonics CCD area image sensor Low readout noise, high resolution (pixel size: 12 レm)
s10141-1107s
2 3 4 5 6 7 8		 Hamamatsu Photonics CCD area image sensor Low readout noise, high resolution (pixel size: 12 レm)
s10141-1108s
2 3 4 5 6 7 8		 Hamamatsu Photonics CCD area image sensor Low readout noise, high resolution (pixel size: 12 レm)
s10141-1109s
2 3 4 5 6 7 8		 Hamamatsu Photonics CCD area image sensor Low readout noise, high resolution (pixel size: 12 レm)
s10170
2		 Hamamatsu Photonics RGB color sensor integrated in small and thin package
s10200-02
2 3 4 5 6 7 8 9 10 11		 Hamamatsu Photonics Diode; Attenuator; VR (V): 30; IF (mA): 100; Pd (mW): 150; rf (ohm) max: 2.5; Condition IF at rf (mA): 10; Condition f at rf (MHz): 100; VF (V) max: 1; Condition IF at VF (mA): 10; C (pF) max: 0.37; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: SFP
s10201-04
2 3 4 5 6 7 8 9 10 11		 Hamamatsu Photonics Back-thinned TDI-CCD Operating the back-thinned CCD in TDI mode delivers high sensitivity.
s10202-08
2 3 4 5 6 7 8 9 10 11		 Hamamatsu Photonics Back-thinned TDI-CCD Operating the back-thinned CCD in TDI mode delivers high sensitivity.
s10202-16
2 3 4 5 6 7 8 9 10 11		 Hamamatsu Photonics Back-thinned TDI-CCD Operating the back-thinned CCD in TDI mode delivers high sensitivity.
s10317
2		 Hamamatsu Photonics Photo IC for laser beam synchronous detection Low voltage operation (3.3 V)
s10317-01
2		 Hamamatsu Photonics Photo IC for laser beam synchronous detection Low voltage operation (3.3 V)
s10
2		 10 to 500 MHz THIN FILM SPST SWITCH
s11
2		 10 to 500 MHz THIN FILM SPST SWITCH
s1226-18bu
2		 Hamamatsu Photonics Si photodiode For high power UV monitor, and UV to visible, precision photometry
s1336-18bu
2		 Hamamatsu Photonics MOSFET, Switching; VDSS (V): 80/-80; ID (A): 3.4/-2.6; Pch : -; RDS (ON) typ. (ohm) @10V: 0.09/0.165; RDS (ON) typ. (ohm) @4V[4.5V]: 0.1/0.2; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 400/930; toff (µs) typ: 0.09/0.165; Package: SOP-8