參數(shù)資料
型號(hào)： S10141-1007S
廠商： Hamamatsu Photonics
英文描述： Diode; Antenna switching; VR (V): 30; IF (mA): 100; Pd (mW): 100; rf (ohm) max: 1.3 (RKP200KP Faction) 2.0 (RKP201KN Faction); Condition IF at rf (mA): 10 (RKP200KP Faction) 2 (RKP201KN Faction); Condition f at rf (MHz): 100; VF (V) max: 1.0 (RKP200KP Faction) 0.9 (RKP201KN Faction); Condition IF at VF (mA): 10 (RKP200KP Faction) 2 (RKP201KN Faction); C (pF) max: 0.35; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: MFP12
中文描述： 防治荒漠化領(lǐng)域的圖像傳感器讀出低噪音，高清晰度（像素尺寸：12レ米）
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 206K
代理商： S10141-1007S
CCD area image sensor
S10140/S10141 series
I
Absolute maximum ratings (Ta=25
°
C)
Parameter
Operating temperature
Storage temperature
OD voltage
RD voltage
ISV voltage
ISH voltage
IGV voltage
IGH voltage
SG voltage
OG voltage
RG voltage
TG voltage
Vertical clock voltage
Horizontal clock voltage
I
Operating conditions (MPP mode, Ta=25
°
C)
Parameter
Output transistor drain voltage
Reset drain voltage
Output gate voltage
Substrate voltage
Test point (vertical input source)
Test point (horizontal input source)
Test point (vertical input gate)
Test point (horizontal input gate)
Vertical shift register
clock voltage
Horizontal shift register
clock voltage
Symbol
Topr
Tstg
V
OD
V
RD
V
ISV
V
ISH
V
IG1V
, V
IG2V
V
IG1H
, V
IG2H
V
SG
V
OG
V
RG
V
TG
V
P1V
, V
P2V
V
P1H
, V
P2H
Min.
-50
-50
-0.5
-0.5
-0.5
-0.5
-10
-10
-10
-10
-10
-10
-10
-10
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
+30
+70
+30
+18
+18
+18
+15
+15
+15
+15
+15
+15
+15
+15
Unit
°
C
°
C
V
V
V
V
V
V
V
V
V
V
V
V
Symbol
V
OD
V
RD
V
OG
V
SS
V
ISV
V
ISH
V
IG1V
, V
IG2V
V
IG1H
, V
IG2H
V
P1VH
, V
P2VH
V
P1VL
, V
P2VL
V
P1HH
, V
P2HH
V
P1HL
, V
P2HL
V
SGH
V
SGL
V
RGH
V
RGL
V
TGH
V
TGL
Min.
-
-
-
-
-
-
-9
-9
-
-
-
-
-
-
-
-
-
-
Typ.
24
12
3
0
V
RD
V
RD
-8
-8
3
-8
5
-8
5
-8
5
-8
3
-8
Max.
-
-
-
-
-
-
0
0
-
-
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
V
V
V
High
Low
High
Low
High
Low
High
Low
High
Low
V
V
Summing gate voltage
V
Reset gate voltage
V
Transfer gate voltage
V
I
Electrical characteristics (Ta=25
°
C)
Parameter
Signal output frequency
Vertical shift register capacitance *
2
Horizontal shift register capacitance *
2
Summing gate capacitance
Reset gate capacitance
Transfer gate capacitance
Charge transfer efficiency *
3
DC output level *
4
Output impedance *
4
Power consumption *
4
*
5
*2: S10140-1108, S10141-1108S
*3: Charge transfer efficiency per pixel, measured at half of the full well capacity.
*4: The values depend on the load resistance. (Typical, VOD=24 V, Load resistance=100 k
)
*5: Power consumption of the on-chip amplifier
Symbol
fc
C
P1V
, C
P2V
C
P1H
, C
P2H
C
SG
C
RG
C
TG
CTE
Vout
Zo
P
Min.
-
-
-
-
-
-
0.99995
12
-
-
Typ.
250
3600
150
30
30
75
0.99999
17
8
4
Max.
500
-
-
-
-
-
-
18
-
-
Unit
kHz
pF
pF
pF
pF
pF
-
V
k
mW
2
相關(guān)PDF資料
PDF描述
S10141-1008S low readout noise,high resolution(pixel size:12um)
S10141-1009S CCD area image sensor Low readout noise, high resolution (pixel size: 12 レm)
S10141-1107S CCD area image sensor Low readout noise, high resolution (pixel size: 12 レm)
S10141-1108S CCD area image sensor Low readout noise, high resolution (pixel size: 12 レm)
S10141-1109S CCD area image sensor Low readout noise, high resolution (pixel size: 12 レm)
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