參數(shù)資料
型號： S10202-08
廠商： Hamamatsu Photonics
英文描述： Back-thinned TDI-CCD Operating the back-thinned CCD in TDI mode delivers high sensitivity.
中文描述： 回到清淡TDI發(fā)動機，防治荒漠化工作的后臺薄TDI的模式在防治荒漠化公約提供高靈敏度。
文件頁數(shù)： 4/11頁
文件大小： 232K
代理商： S10202-08
Back-thinned TDI-CCD
S10200-02, S10201-04, S10202-08, S10202-16
4
I
Operating conditions (TDI mode, Ta=25
°
C)
Parameter
Output transistor drain voltage
Reset drain voltage
Output gate voltage
Substrate voltage
Overflow drain voltage
Overflow gate voltage
Vertical shift register
clock voltage
Horizontal shift register
clock voltage
Symbol
V
OD
V
RD
V
OG
V
DGND
, V
AGND
V
OFD
V
OFG
V
P1VH
, V
P2VH
, V
P3VH
V
P1VL
, V
P2VL
, V
P3VL
V
P1HH
, V
P2HH
V
P1HL
, V
P2HL
V
SGH
V
SHL
V
RGH
V
RGL
V
TGH
V
TGL
Min.
12
11
3
-
4
0
4
-6
4
-6
4
-6
7
-6
4
-6
Typ.
15
12
5
0
6
4
6
-5
6
-5
6
-5
8
0
6
-5
Max.
18
13
7
-
9
6
8
-4
8
-4
8
-4
9
-
8
-4
Unit
V
V
V
V
V
V
High
Low
High
Low
High
Low
High
Low
High
Low
V
V
Summing gate voltage
V
Reset gate voltage
V
Transfer gate voltage
V
I
Electrical and optical characteristics (Ta=25
°
C)
Parameter
Saturation output voltage
Full well capacity *
1
CCD node sensitivity
Dark current *
1,
*
2
Readout noise *
3
Dynamic range
Photo response non-uniformity *
4
Spectral response range
*1: TDI mode
*2: Line rate 50 kHz, accumulated dark signal after 128-stage transfer
*3: Readout frequency 30 MHz
*4: Measured at one-half of the full well. In TDI mode.
Symbol
Vsat
FW
Sv
DS
Nr
DR
PRNU
λ
Min.
-
100
3
-
-
-
-
-
Typ.
Max.
-
140
4
300
200
-
±10
-
Unit
V
ke-
μV/e-
e-/pixel
e- rms
-
%
nm
FW
×
Sv
120
3.5
100
100
1200
±3
200 to 1100
I
Electrical characteristics (Ta=25
°
C)
Parameter
Signal output frequency
Reset clock frequency
Symbol
fc
frg
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.99995
-
-
-
-
Typ.
30
30
250
400
650
50
50
50
100
50
90
90
40
60
100
20
40
40
20
40
40
0.99999
6.5
300
5
75
Max.
40
40
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
-
Unit
MHz
MHz
S10200-02
S10201-04
S10202-08/-16
S10200-02
S10201-04
S10202-08
S10202-16
S10200-02
S10201-04
S10202-08/-16
S10200-02
S10201-04
S10202-08/-16
S10200-02
S10201-04
S10202-08/-16
S10200-02
S10201-04
S10202-08/-16
Vertical shift register
capacitance
C
P1V
, C
P2V
, C
P3V
pF
Line rate
LR
kHz
Horizontal shift register
capacitance
C
P1H
, C
P2H
pF
Transfer gate capacitance
C
TG
pF
Summing gate capacitance
C
SG
pF
Reset gate capacitance
C
RG
pF
Charge transfer efficiency *
5
Output level *
6
Output impedance *
7
Output MOSFET supply current/node
Power consumption *
6,
*
7
*5: Charge transfer efficiency per pixel, measured at half of the full well capacity.
*6: V
OD
=15 V, Load resistance=2.2 k
*7: Power consumption of the on-chip amplifier plus load resistance.
CTE
Vout
Zo
Ido
P
-
V
mA
mW
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參數(shù)描述
S10202-16 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Back-thinned TDI-CCD Operating the back-thinned CCD in TDI mode delivers high sensitivity.
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