參數(shù)資料
型號： S12PWM8B8CV1
廠商： Motorola, Inc.
英文描述： MC9S12DT128 Device User Guide V02.09
中文描述： MC9S12DT128設(shè)備的用戶手冊V02.09
文件頁數(shù)： 111/138頁
文件大?。?/td> 2083K
代理商： S12PWM8B8CV1
MC9S12DT128 Device User Guide — V02.09
111
A.3 NVM, Flash and EEPROM
NOTE:
Unless otherwise noted the abbreviation NVM (Non Volatile Memory) is used for
both Flash and EEPROM.
A.3.1 NVM timing
The time base for all NVM program or erase operations is derived from the oscillator. A minimum
oscillator frequency f
NVMOSC
is required for performing program or erase operations. The NVM modules
do not have any means to monitor the frequency and will not prevent program or erase operation at
frequencies above or below the specified minimum. Attempting to program or erase the NVM modules at
a lower frequency a full program or erase transition is not assured.
The Flash and EEPROM program and erase operations are timed using a clock derived from the oscillator
using the FCLKDIV and ECLKDIV registers respectively. The frequency of this clock must be set within
the limits specified as f
NVMOP
.
The minimum program and erase times shown in
Table A-11
are calculated for maximum f
NVMOP
and
maximum f
bus
. The maximum times are calculated for minimum f
NVMOP
and a f
bus
of 2MHz.
A.3.1.1 Single Word Programming
The programming time for single word programming is dependant on the bus frequency as a well as on
the frequency f
NVMOP
and can be calculated according to the following formula.
t
swpgm
f
NVMOP
A.3.1.2 Row Programming
ThisappliesonlytotheFlashwhereupto32wordsinarowcanbeprogrammedconsecutivelybykeeping
the command pipeline filled. The time to program a consecutive word can be calculated as:
The time to program a whole row is:
Row programming is more than 2 times faster than single word programming.
A.3.1.3 Sector Erase
Erasing a 512 byte Flash sector or a 4 byte EEPROM sector takes:
9
--------1
25
1
f
bus
----------
+
=
t
bwpgm
4
1
f
NVMOP
---------------------
9
1
f
bus
----------
+
=
t
brpgm
t
swpgm
31 t
bwpgm
+
=
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S12PWM8B8CV1D 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:MC9S12DT128 Device User Guide V02.09
S12Q 功能描述:整流器 1200V 12A Std. Recovery RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
S12QR 功能描述:整流器 1200V 12A REV Leads Std. Recovery RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
S12R15 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1 AND 2 WATT DC/DC CONVERTERS
S12SCIV2 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:MC9S12DT128 Device User Guide V02.09
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