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參數資料
| 型號： | S1336-5BQ |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Si photodiode UV to near IR for precision photometry |
| 中文描述： | 硅光電二極管紫外到近紅外精密光度法 |
| 文件頁數： | 3/4頁 |
| 文件大?。?/td> | 232K |
| 代理商： | S1336-5BQ |
Si photodiode
S1336 series
S
AMBIENT TEMPERATURE (
C)
-20
(Typ. V
R
=
10 mV)
10 k
0
20
40
60
80
100 k
1 M
10 M
100 M
1 G
10 G
100 G
1 T
S1336-44BQ/BK
S1336-5BQ/BK
S1336-18BQ/BK
S1336-8BQ/BK
I
Shunt resistance vs. ambient temperature
KSPDB0101EA
S1336-18BQ/-18BK
S1336-5BQ/K, S1336-44BQ/K
KSPDA0102EB
2
4
2
8.1 ± 0.1
9.1 ± 0.2
5.08 ± 0.2
CONNECTED
TO CASE
The K type borosilicate glass
window may extend a maximum
of 0.2 mm above the upper surface
of the cap.
PHOTOSENSITIVE
SURFACE
WINDOW
5.9 ± 0.1
0.45
LEAD
KSPDA0103EA
1
2
3
4.7 ± 0.1
5.4 ± 0.2
2.54 ± 0.2
CONNECTED TO CASE
WINDOW
3.0 ± 0.2
0.45
LEAD
I
Dimensional outlines (unit: mm)
3
相關PDF資料 |
PDF描述 |
|---|---|
| S1336-8BK | Si photodiode UV to near IR for precision photometry |
| S1336-8BQ | Si photodiode UV to near IR for precision photometry |
| S1336-18BK | Si photodiode UV to near IR for precision photometry |
| S1337-16BQ | Si photodiode For UV to IR, precision photometry |
| S1337 | Si photodiode For UV to IR, precision photometry |
相關代理商/技術參數 |
參數描述 |
|---|---|
| S1336-8BK | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode UV to near IR for precision photometry |
| S1336-8BQ | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode UV to near IR for precision photometry |
| S1337 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For UV to IR, precision photometry |
| S1337-1010BQ | 制造商:MISCELLANEOUS 功能描述: |
| S1337-1010BR | 制造商:HAMAMATSU 功能描述:PHOTODIODE 960NM |
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