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參數(shù)資料
| 型號(hào)： | S1336-8BQ |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Si photodiode UV to near IR for precision photometry |
| 中文描述： | 硅光電二極管紫外到近紅外精密光度法 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 232K |
| 代理商： | S1336-8BQ |
Si photodiode
S1336 series
D
REVERSE VOLTAGE (V)
0.01
(Typ. Ta
=
25 C)
100 fA
0.1
1
10
1 pA
10 pA
100 pA
1 nA
10 nA
S1336-8BQ/BK
S1336-18BQ/BK
S1336-5BQ/BK
S1336-44BQ/BK
0.1
190
400
600
800
1000
0.3
0.2
(Typ. Ta
=
25
C)
0.4
0.5
0.6
0.7
S1336-BK
S1336-BQ
WAVELENGTH (nm)
P
I
Spectral response
I
Photo sensitivity temperature characteristic
KSPDB0098EA
T
C
190
400
600
800
1000
WAVELENGTH (nm)
0
(Typ. )
+0.5
+1.0
-0.5
+1.5
KSPDB0053EB
10
2
(Typ. Ta
=
25
C, V
R
=
0 V)
10 ns
10
3
10
4
10
5
100 ns
1
μ
s
10
μ
s
100
μ
s
1 ms
S1336-18BQ/BK
S1336-5BQ/BK
S1336-8BQ/BK
S1336-44BQ/BK
R
LOAD RESISTANCE (
)
I
Rise time vs. load resistance
I
Dark current vs. reverse voltage
KSPDB0099EA
KSPDB0100EA
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S1336-18BK | Si photodiode UV to near IR for precision photometry |
| S1337-16BQ | Si photodiode For UV to IR, precision photometry |
| S1337 | Si photodiode For UV to IR, precision photometry |
| S1337-1010BQ | Si photodiode For UV to IR, precision photometry |
| S1337-1010BR | Si photodiode For UV to IR, precision photometry |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S1337 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For UV to IR, precision photometry |
| S1337-1010BQ | 制造商:MISCELLANEOUS 功能描述: |
| S1337-1010BR | 制造商:HAMAMATSU 功能描述:PHOTODIODE 960NM |
| S1337-16BQ | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For UV to IR, precision photometry |
| S1337-16BR | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For UV to IR, precision photometry |
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