- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄31007 > S1B (VISHAY SEMICONDUCTORS) 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC PDF資料下載
參數(shù)資料
| 型號： | S1B |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封裝： | LEAD FREE, PLASTIC, SMA, 2 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 98K |
| 代理商： | S1B |
S1A thru S1M
Vishay General Semiconductor
Document Number: 88711
Revision: 07-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Leakage Characteristics
T
J = 25 °C
Pulse Width = 300 s
1 % Duty Cycle
0.4
100
1.6
2.0
0.8
1.2
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rretn
(A)
10
1
0.1
0.01
020
60
40
100
80
0.01
0.001
0.1
10
1
T
J = 125 °C
T
J = 25 °C
T
J = 75 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
Leakage
C
u
rrent
(
A)
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
Reverse Voltage (V)
J
u
nction
Capacitance
(pF)
0.1
0.01
1
10
100
10
1
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
t - Pulse Duration (s)
Transient
Thermal
Impedance
(°C/
W
)
0.1
0.01
1
10
100
1000
10
1
Units Mounted on
0.20 x 0.20" (5.0 x 5.0 mm)
x 0.5 mil. Inches (0.013 mm)
Thick Copper Land Areas
S1(K, M)
S1(A - J)
0.030 (0.76)
0.060 (1.52)
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.157 (3.99)
0.177 (4.50)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.006 (0.152)
0.012 (0.305)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
DO-214AC (SMA)
Mounting Pad Layout
0.074 (1.88)
MAX.
0.208
(5.28) REF.
0.066 (1.68)
MIN.
0.060 (1.52)
MIN.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S1G | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC |
| S1M | 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC |
| S1G-E3 | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC |
| S1K-HE3 | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC |
| S1J-E3 | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S-1B | 制造商:Nihon Kaiheiki Ind Co Ltd 功能描述:30V 50000(@BIv) / 25000(dCIv) bL +85 -30 Bulk |
| S1-B | 制造商:Multi-Contact 功能描述: |
| S1B R2 | 制造商:SKMI/Taiwan 功能描述:Diode Switching 100V 1A 2-Pin SMA T/R 制造商:Taiwan Semiconductor 功能描述:Diode Switching 100V 1A 2-Pin SMA T/R |
| S1B | 制造商:Vishay Semiconductors 功能描述:DIODE SMD 1.0A 100V |
| S1B/11T | 功能描述:整流器 1.0 Amp 100 Volt 40A IFSM @ 8.3ms RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。