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參數(shù)資料
| 型號： | S1D-HE3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封裝： | LEAD FREE, PLASTIC, SMA, 2 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 344K |
| 代理商： | S1D-HE3 |
www.vishay.com
2
Document Number 88711
06-Sep-05
S1A thru S1M
Vishay General Semiconductor
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Notes:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B.
with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
Parameter
Test condition
Symbol
S1A
S1B
S1D
S1G
S1J
S1K
S1M
Unit
Maximum instantaneous
forward voltage
at 1.0 A
VF
1.1
V
Maximum DC reverse current
at Rated DC blocking voltage
TA = 25 °C
TA= 125 °C
IR
1.0
5.0
A
50
Typical reverse recovery time
at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
1.8
s
Typical junction capacitance
at 4.0 V, 1 MHz
CJ
12
pF
Parameter
Symbol
S1A
S1B
S1D
S1G
S1J
S1K
S1M
Unit
Typical thermal resistance (1)
RθJA
75
85
°C/W
RθJL
27
30
Figure 1. Forward Current Derating Curve
0
0.6
0.8
1.2
1.0
020
40
60
80
100
120
140
160
A
v
er
age
F
or
w
ard
C
u
rrent
(A)
Lead Temperature (°C)
0.4
0.2
ResistiveorInductive Load
S1(K,M)
S1(A-J)
0.2 x 0.2" (5.0 x 5.0mm)
Thick Copper Pad Areas
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
0
10
100
1
100
10
S1(K,M)
S1(A-J)
TL = 110 °C
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S1J-7-F | 1 A, 600 V, SILICON, SIGNAL DIODE |
| S1MB-7-F | 1 A, 1000 V, SILICON, SIGNAL DIODE |
| S1M | 1 A, 1000 V, SILICON, SIGNAL DIODE |
| S1D | 1 A, 200 V, SILICON, SIGNAL DIODE |
| S1B | 1 A, 100 V, SILICON, SIGNAL DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S1DHE3/2GT | 功能描述:整流器 1.0 Amp 200 Volt 40A IFSM @ 8.3ms RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| S1DHE3/5AT | 功能描述:整流器 1.0 Amp 200 Volt 40A IFSM @ 8.3ms RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| S1DHE3/61T | 功能描述:整流器 1.0 Amp 200 Volt 40A IFSM @ 8.3ms RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| S1DHE3/63T | 功能描述:整流器 1.0 Amp 200 Volt 40A IFSM @ 8.3ms RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| S1DHE3_A/H | 制造商:Vishay Semiconductors 功能描述: |
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