參數(shù)資料
型號： S1D2511B01
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： DEFLECTION PROCESSOR FOR MULTISYNC MONITORS
中文描述： 偏轉(zhuǎn)處理器多同步監(jiān)測儀
文件頁數(shù)： 14/34頁
文件大?。?/td> 330K
代理商： S1D2511B01
S1D2511B01 DEFLECTION PROCESSOR FOR MULTISYNC MONITORS
14
B+ SECTION
OPERATING CONDITIONS
ELECTRICAL CHARACTERISTICS
(V
CC
= 12V, Tamp = 25
°
C )
VERTICAL MOIRE
Vertical moire (measured on VOUTDC) pin 23
VMOIRE
Sub address 0C
Byte 01x11111
6
mV
BREATHING COMPENSATION
DC breathing control range
(15)
BRRANG
V18
1
12
V
Vertical output variation versus DC breathing con-
trol (Pin 23)
BRADj
V18
≥
V
REF-V
V18=4V
0
-10
%
%
Table 11. B+ Section
Operating Conditions
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Minimum feedback resistor
FeedRes
Resistor between pins 15 and 14
5
K
Table 12. B+ Section Electrical Characteristics
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Error amplifier open loop gain
OLG
At low frequency
(10)
85
dB
Unity gain band width
UGBW
see
(7)
6
MHz
Regulation input bias current
IRI
Current sourced by pin 15
(PNP base)
0.2
μ
A
Maximum guaranted error amplifier
output current
EAOI
Current sourced by pin 14
Current sunk by pin 14
0.5
2
mA
mA
Current sense input voltage gain
CSG
Pin 16
3
Max current sense input thres hold
voltage
MCEth
Pin 16
1.2
V
Current sense input bias current
ISI
Current sunk by pin 16
(NPN base )
1
μ
A
Maxmum external power transistor on
time
Tonmax
% of H-period
@ f0=27kHz
(16)
100
%
B+ output low level saturation voltage
B+OSV
V
28
with I
28
=10mA
0.25
V
Internal reference voltage
IV
REF
On error amp
(+) input for subaddress 0B
byte 1000000
4.8
V
Table 10. Vertical Section Electrical Characteristics (Continued)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
相關(guān)PDF資料
PDF描述
S1D2511B01-A0B0 DEFLECTION PROCESSOR FOR MULTISYNC MONITORS
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