參數(shù)資料
型號(hào): S1M8837X01-G0T0
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FRACTIONAL-N RF/INTEGER-N IF DUAL PLL
中文描述: 分?jǐn)?shù)N射頻/整數(shù)N如果雙鎖相環(huán)
文件頁(yè)數(shù): 1/29頁(yè)
文件大?。?/td> 234K
代理商: S1M8837X01-G0T0
FRACTIONAL-N RF/INTEGER-N IF DUAL PLL
S1M8836/37
1
INTRODUCTION
The S1M8836/37 is a Fractional-N frequency synthesizer with integrated
prescalers, designed for RF operation up to
1.0GHz
/2.5GHz and for IF
operation up to 520MHz. The fractional-N synthesizer allows fast-locking, low
phase noise phase-locked loops to be built easily, thus having rapid channel
switching and reducing standby time for extended battery life. The S1M8836/37
based on
Σ
-
fractional-N techniques solves the fractional spur problems in
other fractional-N synthesizers based on charge pump compensation. The
synthesizer also has an additional feature that the PCS/CDMA channel
frequency in steps of 10kHz can be accurately programmed.
The S1M8836/37 contains quadruple-modulus prescalers. The S1M8836 RF
synthesizer adopts an 8/9/12/13 prescaler(16/17/20/21 for the S1M8837) and the IF synthesizer adopts an 8/9
prescaler. Phase detector gain is user-programmable for maximum flexibility to address IS-95 CDMA and
IMT2000. Various program-controlled power down options as well as low supply voltage help the design of
wireless cell phones having minimum power consumption.
Using the Samsung's proprietary digital phase-locked-loop technique, the S1M8836/37 has a linear phase
detector characteristic and can be used for very stable, low noise PLL's. Supply voltage can range from 2.7V to
4.0V. The S1M8836/37 is available in a 24-QFN package.
FEATURES
High operating frequency dual synthesizer
Operating voltage range : 2.7 to 4.0V
Low current consumption(S1M8836: 5.5mA, S1M8837: 7.5mA)
Selectable power saving mode (Icc = 1uA typical @3V)
Quadruple-modulus prescaler and Fractional-N/Integer-N:
S1M8836 (RF) 8/9/12/13
S1M8837 (RF) 16/17/20/21
S1M8836/37 (IF) 8/9
S1M8836: 250MHz to
1.0GHz
(RF) / 45MHz to 520MHz(IF)
Fractional-N
Fractional-N
Integer-N
S1M8837: 500MHz to 2.5GHz(RF) / 45MHz to 520MHz(IF)
Excellent in-band phase noise ( – 85dBc/Hz @ PCS, – 90dBc/Hz @ CDMA)
Improved fractional spurious performance ( < 80dBc )
Frequency resolution (= 10kHz/64 @ f
ref
= 9.84MHz)
Fast channel switching time: <500us
Programmable charge pump output current: from 50
μ
A to 800
μ
A in 50
μ
A steps
Programmability via on-chip serial bus interface
24-QFN-3.5
×
4.5
相關(guān)PDF資料
PDF描述
S1PG High Current Density Surface Mount Glass-Passivated Rectifiers
S1PJ High Current Density Surface Mount Glass-Passivated Rectifiers
S1PA High Current Density Surface Mount Glass-Passivated Rectifiers
S1PB High Current Density Surface Mount Glass-Passivated Rectifiers
S1PD High Current Density Surface Mount Glass-Passivated Rectifiers
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S1MA 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Standard Surface Mount Glass Passivated Rectifier
S1MA-E3/5AT 功能描述:整流器 1.0 Amp 1000 Volt 30A IFSM @ 8.3ms RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
S1MA-E3/61T 功能描述:整流器 1.0 Amp 1000 Volt RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
S1MB 功能描述:整流器 1A,1000V,Glass Pass SMB Rect RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
S1MB-13 功能描述:整流器 1000V 1A RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel