參數(shù)資料
型號(hào)： S29AL004D90SFI013
廠商： SPANSION LLC
元件分類： PROM
英文描述： 256K X 16 FLASH 3V PROM, 90 ns, PDSO48
封裝： LEAD FREE, MO-180AA, SO-44
文件頁(yè)數(shù)： 3/53頁(yè)
文件大?。?/td> 1402K
代理商： S29AL004D90SFI013
November 12, 2004 S29AL004D_00_A0
S29AL004D
11
Pre l i m i n a r y
The internal state machine is set for reading array data upon device power-up,
or after a hardware reset. This ensures that no spurious alteration of the memory
content occurs during the power transition. No command is necessary in this
mode to obtain array data. Standard microprocessor read cycles that assert valid
addresses on the device address inputs produce valid data on the device data
outputs. The device remains enabled for read access until the command register
contents are altered.
See “Reading Array Data” for more information. Refer to the AC Read Operations
table for timing specifications and to 13 for the timing diagram. ICC1 in the DC
Characteristics table represents the active current specification for reading array
data.
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data
to the device and erasing sectors of memory), the system must drive WE# and
CE# to VIL, and OE# to VIH.
For program operations, the BYTE# pin determines whether the device accepts
program data in bytes or words. Refer to “Word/Byte Configuration” for more
information.
The device features an Unlock Bypass mode to facilitate faster programming.
Once the device enters the Unlock Bypass mode, only two write cycles are re-
quired to program a word or byte, instead of four. The “Word/Byte Program
Command Sequence” section has details on programming data to the device
using both standard and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device.
Tables 2 and 3 indicate the address space that each sector occupies. A “sector
address” consists of the address bits required to uniquely select a sector. The
“Command Definitions” section has details on erasing a sector or the entire chip,
or suspending/resuming the erase operation.
After the system writes the autoselect command sequence, the device enters the
autoselect mode. The system can then read autoselect codes from the internal
register (which is separate from the memory array) on DQ7–DQ0. Standard read
cycle timings apply in this mode. Refer to the “Autoselect Mode” and “Autoselect
Command Sequence” sections for more information.
ICC2 in the DC Characteristics table represents the active current specification for
the write mode. The “AC Characteristics” section contains timing specification ta-
bles and timing diagrams for write operations.
Program and Erase Operation Status
During an erase or program operation, the system may check the status of the
operation by reading the status bits on DQ7–DQ0. Standard read cycle timings
and ICC read specifications apply. Refer to “Write Operation Status” for more in-
formation, and to “AC Characteristics” for timing diagrams.
Standby Mode
When the system is not reading or writing to the device, it can place the device
in the standby mode. In this mode, current consumption is greatly reduced, and
the outputs are placed in the high impedance state, independent of the OE#
input.
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