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參數(shù)資料
| 型號： | S29AL004D90SFI013 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 256K X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| 封裝： | LEAD FREE, MO-180AA, SO-44 |
| 文件頁數(shù)： | 44/53頁 |
| 文件大?。?/td> | 1402K |
| 代理商： | S29AL004D90SFI013 |
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November 12, 2004 S29AL004D_00_A0
S29AL004D
49
Pre l i m i n a r y
Erase and Programming Performance
Notes:
1. Typical program and erase times assume the following conditions: 25
°C, VCC = 3.0 V, 100,000 cycles, checkerboard
data pattern.
2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most
bytes program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program
command. See Table 5 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 100,000 cycles per sector
TSOP, SO and BGA Pin Capacitance
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.7
10
s
Excludes 00h programming
prior to erasure
Chip Erase Time
14
s
Byte Programming Time
5
150
s
Excludes system level
overhead (Note 5)
Word Programming Time
7
210
s
Chip Programming Time
Byte Mode
4.2
12.5
s
Word Mode
2.9
8.5
s
Parameter
Symbol
Parameter Description
Test Setup
Package
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
TSOP, SO
6
7.5
pF
BGA
4.2
5.0
COUT
Output Capacitance
VOUT = 0
TSOP, SO
8.5
12
BGA
5.4
6.5
CIN2
Control Pin Capacitance
VIN = 0
TSOP, SO
7.5
9
BGA
3.9
4.7
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