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參數(shù)資料
| 型號： | S29AL008D90TAIR21 |
| 廠商： | Spansion Inc. |
| 英文描述： | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 8兆位（1 M中的x 8-Bit/512畝x 16位），3.0伏的CMOS只引導扇區(qū)閃存 |
| 文件頁數(shù)： | 1/55頁 |
| 文件大小： | 1723K |
| 代理商： | S29AL008D90TAIR21 |
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“This document states the current technical specifications regarding the Spansion product(s) described herein. Spansion LLC deems the products
to have been in sufficient production volume such that subsequent versions of this document are not expected to change. However, typographical
or specification corrections, or modifications to the valid combinations offered may occur.”
Publication Number S29AL008D_00
Revision A Amendment 3 Issue Date June 16, 2005
This document has not been approved. Sharing this document with non-Spansion employees violates QS9000/TS16949 requirements.
S29AL008D
8 Megabit (1 M x 8-Bit/512 K x 16-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory
Data Sheet
Distinctive Characteristics
Architectural Advantage
Single power supply operation
— 2.7 to 3.6 volt read and write operations for battery-
powered applications
Manufactured on 200nm process technology
— Compatible with 0.32 m and 230nm Am29LV160
devices
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and fifteen
64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and fifteen
32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
— A hardware method of locking a sector to prevent
any program or erase operations within that sector
— Sectors can be locked in-system or via programming
equipment
— Temporary Sector Unprotect feature allows code
changes in previously locked sectors
Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
Top or bottom boot block configurations
available
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically writes
and verifies data at specified addresses
Compatibility with JEDEC standards
— Pinout and software compatible with single-power
supply Flash
— Superior inadvertent write protection
Performance Characteristics
High performance
— Access times as fast as 55 ns
— Extended temperature range (-40°C to +125°C)
Ultra low power consumption (typical values
at 5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
— 15 mA program/erase current
Cycling endurance: 1,000,000 cycles per
sector typical
Data retention: 20 years typical
— Reliable operation for the life of the system
Package option
48-ball FBGA
48-pin TSOP
44-pin SO
Software Features
Data# Polling and toggle bits
— Provides a software method of detecting program or
erase operation completion
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from, or
program data to, a sector that is not being erased,
then resumes the erase operation
Hardware Features
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting program or
erase cycle completion
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading array
data
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29AL008D90TAIR22 | Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 22pF; Working Voltage (Vdc)[max]: 500V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.079" x 0.049"; Container: Bulk; Features: High Voltage; Unmarked |
| S29AL008D90TAIR23 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAN011 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAN012 | Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 22pF; Working Voltage (Vdc)[max]: 500V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.079" x 0.049"; Container: Bulk; Features: High Voltage; Unmarked |
| S29AL008D55MFN010 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29AL008D90TAIR22 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAIR23 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAN010 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAN011 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAN012 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
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