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參數(shù)資料
| 型號： | S29AL008D90TAIR21 |
| 廠商： | Spansion Inc. |
| 英文描述： | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 8兆位（1 M中的x 8-Bit/512畝x 16位），3.0伏的CMOS只引導(dǎo)扇區(qū)閃存 |
| 文件頁數(shù)： | 40/55頁 |
| 文件大?。?/td> | 1723K |
| 代理商： | S29AL008D90TAIR21 |
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June 16, 2005 S29AL008D_00A3
S29AL008D
45
Da t a
S h ee t
AC Characteristics
WE#
CE#
OE#
High
tOE
High
DQ7
DQ0–DQ6
RY/BY#
tBUS
Compleme
Tru
Addresses
VA
tOEH
tCE
tCH
tOH
tDF
VA
Status
Complement
Status
Tru
Valid Data
tACC
tRC
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array
data read cycle.
Figure 19. Data# Polling Timings (During Embedded Algorithms)
WE#
CE#
OE#
High
tOE
DQ6/DQ2
RY/BY#
tBUS
Addresses
VA
tOEH
tCE
tCH
tOH
tDF
VA
tACC
tRC
Valid Data
Valid
(first read)
(second read)
(stops toggling)
Valid
VA
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status
read cycle, and array data read cycle.
Figure 20. Toggle Bit Timings (During Embedded Algorithms)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29AL008D90TAIR22 | Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 22pF; Working Voltage (Vdc)[max]: 500V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.079" x 0.049"; Container: Bulk; Features: High Voltage; Unmarked |
| S29AL008D90TAIR23 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAN011 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAN012 | Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 22pF; Working Voltage (Vdc)[max]: 500V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Tin (Sn) Plated Nickel Barrier; Body Dimensions: 0.079" x 0.049"; Container: Bulk; Features: High Voltage; Unmarked |
| S29AL008D55MFN010 | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29AL008D90TAIR22 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAIR23 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAN010 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAN011 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D90TAN012 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
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