參數資料
型號： S29CD016G0MFAN003
廠商： SPANSION LLC
元件分類： PROM
英文描述： 16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
中文描述： 512K X 32 FLASH 2.7V PROM, 64 ns, PBGA80
封裝： 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-80
文件頁數： 73/81頁
文件大?。?/td> 1276K
代理商： S29CD016G0MFAN003
March 3, 2009 S29CD-G_00_B1
S29CD-G Flash Family
73
Da ta
Shee t
(Prelim i nar y )
25. Erase and Programming Performance
Notes
1. Typical program and erase times assume the following conditions: 25
° C, 2.5 V V
CC, 100K cycles. Additionally, programming typicals
assume checkerboard pattern.
2. Under worst case conditions of 145°C, VCC = 2.5 V, 1M cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 15.2
on page 52 and Table 15.3 on page 53 for further information on command definitions.
6. PPBs have a program/erase cycle endurance of 100 cycles.
26. Latchup Characteristics
Note
Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
27. PQFP and Fortified BGA Pin Capacitance
Notes
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
Parameter
Typ
Max
Unit
Comments
Sector Erase Time
1.0
5
s
Excludes 00h programming prior to erasure
Chip Erase Time
16 Mb = 46
32 Mb = 78
16 Mb = 230
32 Mb = 460
s
Double Word Program Time
18
250
s
Excludes system level overhead (Note 5)
Accelerated Double Word Program Time
8
130
s
Accelerated Chip Program Time
16 Mb = 5
32 Mb = 10
16 Mb = 50
32 Mb = 100
s
Chip Program Time (Note 3)
x32
16 Mb = 12
32 Mb = 24
16 Mb = 120
32 Mb = 240
s
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins (including A9, ACC, and WP#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
–1.0 V
VCC + 1.0 V
VCC Current
–100 mA
+100 mA
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
6
7.5
pF
COUT
Output Capacitance
VOUT = 0
8.5
12
pF
CIN2
Control Pin Capacitance
VIN = 0
7.5
9
pF
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S29CD016G0MFAN010 制造商:SPANSION 制造商全稱:SPANSION 功能描述:16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
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S29CD016G0MFAN012 制造商:SPANSION 制造商全稱:SPANSION 功能描述:16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
S29CD016G0MFAN013 制造商:SPANSION 制造商全稱:SPANSION 功能描述:16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
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