參數(shù)資料
型號(hào): S29CD016G0MFAN010
廠商: SPANSION LLC
元件分類(lèi): PROM
英文描述: 16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
中文描述: 512K X 32 FLASH 2.7V PROM, 64 ns, PBGA80
封裝: 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-80
文件頁(yè)數(shù): 33/81頁(yè)
文件大?。?/td> 1276K
代理商: S29CD016G0MFAN010
March 3, 2009 S29CD-G_00_B1
S29CD-G Flash Family
37
Da ta
Shee t
(Prelim i nar y )
14. Common Flash Memory Interface (CFI)
The Common Flash Interface (CFI) specification outlines device and host system software interrogation
handshake, which allows specific vendor-specified software algorithms to be used for entire families of
devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and
backward-compatible for the specified flash device families. Flash vendors can standardize existing
interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address
55h in word mode (or address AAh in byte mode), any time the device is ready to read array data. The system
can read CFI information at the addresses given in Tables 13–16. To terminate reading CFI data, the system
must write the reset command.
The system can also write the CFI query command when the device is in the autoselect mode. The device
enters the CFI query mode, and the system can read CFI data at the addresses given in Tables 13–16. The
system must write the reset command to return the device to the autoselect mode.
Wide Web at http://www.spansion.com. Alternatively, contact an AMD representative for copies of these
documents.
Table 14.1 CFI Query Identification String
Addresses
Data
Description
10h
11h
12h
0051h
0052h
0059h
Query Unique ASCII string QRY
13h
14h
0002h
0000h
Primary OEM Command Set
15h
16h
0040h
0000h
Address for Primary Extended Table
17h
18h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Table 14.2 CFI System Interface String
Addresses
Data
Description
1Bh
0023h
VCC Min. (write/erase)
DQ7–DQ4: volts, DQ3–DQ0: 100 millivolt
1Ch
0027h
VCC Max. (write/erase)
DQ7–DQ4: volts, DQ3–DQ0: 100 millivolt
1Dh
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
0004h
Typical timeout per single word/doubleword program 2
N s
20h
0000h
Typical timeout for Min. size buffer program 2
N s (00h = not supported)
21h
0009h
Typical timeout per individual block erase 2N ms
22h
0000h
Typical timeout for full chip erase 2
N ms (00h = not supported)
23h
0005h
Max. timeout for word/doubleword program 2
N times typical
24h
0000h
Max. timeout for buffer write 2N times typical
25h
0007h
Max. timeout per individual block erase 2
N times typical
26h
0000h
Max. timeout for full chip erase 2
N times typical (00h = not supported)
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