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參數(shù)資料
| 型號： | S29PL032J65BFI150 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 2M X 16 FLASH 3V PROM, 65 ns, PBGA56 |
| 封裝： | 7 X 9 MM, LEAD FREE, FBGA-56 |
| 文件頁數(shù)： | 53/94頁 |
| 文件大小： | 949K |
| 代理商： | S29PL032J65BFI150 |
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July 29, 2005 S29PL-J_00_A8
S29PL-J
55
Advance
Information
Command Definitions
Writing specific address and data commands or sequences into the command register initiates
device operations. Table 21 defines the valid register command sequences. Writing incorrect
address and data values or writing them in the improper sequence may place the device in
an unknown state. A reset command is then required to return the device to reading array data.
All addresses are latched on the falling edge of WE# or CE# (CE1# / CE2# in PL129J), whichever
happens later. All data is latched on the rising edge of WE# or CE# (CE1# / CE2# in PL129J),
whichever happens first. Refer to the AC Characteristic section for timing diagrams.
Reading Array Data
The device is automatically set to reading array data after device power-up. No commands are
required to retrieve data. Each bank is ready to read array data after completing an Embedded
Program or Embedded Erase algorithm.
After the device accepts an Erase Suspend command, the corresponding bank enters the
erase-suspend-read mode, after which the system can read data from any non-erase-suspended
sector within the same bank. The system can read array data using the standard read timing,
except that if it reads at an address within erase-suspended sectors, the device outputs status
data. After completing a programming operation in the Erase Suspend mode, the system may
once again read array data with the same exception. See the Erase Suspend/Erase Resume Com-
mands section for more information.
After the device accepts a Program Suspend command, the corresponding bank enters the pro-
gram-suspend-read mode, after which the syst em ca n read data from any
non-program-suspended sector within the same bank. See the Program Suspend/Program Re-
sume Commands for more information.
The system must issue the reset command to return a bank to the read (or erase-suspend-read)
mode if DQ5 goes high during an active program or erase operation, or if the bank is in the au-
toselect mode. See the next section, Reset Command, for more information.
See also Requirements for Reading Array Data in the Device Bus Operations section for more
information. The AC Characteristic table provides the read parameters, and Figure 12 shows the
timing diagram.
58h
0027h (PL127J)
0027h (PL129J)
0017h (PL064J)
000Fh (PL032J)
Bank 1 Region Information
X = Number of Sectors in Bank 1
59h
0060h (PL127J)
0060h (PL129J)
0030h (PL064J)
0018h (PL032J)
Bank 2 Region Information
X = Number of Sectors in Bank 2
5Ah
0060h (PL127J)
0060h (PL129J)
0030h (PL064J)
0018h (PL032J)
Bank 3 Region Information
X = Number of Sectors in Bank 3
5Bh
0027h (PL127J)
0027h (PL129J)
0017h (PL064J)
000Fh (PL032J)
Bank 4 Region Information
X = Number of Sectors in Bank 4
Table 20 Primary Vendor-Specific Extended Query (Continued)
Addresses
Data
Description
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| S2C3R-1-12-H | 4000 MHz - 12000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 2 dB INSERTION LOSS |
| S2C5R-1-12-RC | 4000 MHz - 18000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 2.8 dB INSERTION LOSS |
| S2H3R-1H | 10 MHz - 1000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 1.2 dB INSERTION LOSS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29PL032J70BAI120 | 功能描述:閃存 32Mb 3V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29PL032J70BAI122 | 功能描述:閃存 32MB 閃存 3V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29PL032J70BAW120 | 功能描述:閃存 32MB 閃存 3V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29PL032J70BFI120 | 功能描述:閃存 32Mb 3V 70ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29PL032J70BFI120(E) | 制造商:Spansion 功能描述:Cut Tape |
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