參數(shù)資料
型號(hào)： S29WS128J0PBFW002
廠商： SPANSION LLC
元件分類： PROM
英文描述： 8M X 16 FLASH 1.8V PROM, 55 ns, PBGA84
封裝： 8 X 11.60 MM, LEAD FREE, FBGA-84
文件頁數(shù)： 25/97頁
文件大?。?/td> 2421K
代理商： S29WS128J0PBFW002
May 11, 2006 S29WS-J_00_A6
S29WS128J/064J
31
D a ta
Sh eet
Table 9. System Interface String
Table 10. Device Geometry Definition
Addresses
Data
Description
1Bh
0017h
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
0019h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
0003h
Typical timeout per single byte/word write 2N s
20h
0000h
Typical timeout for Min. size buffer write 2N
s (00h = not supported)
21h
0009h
Typical timeout per individual block erase 2N ms
22h
0000h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
0004h
Max. timeout for byte/word write 2N times typical
24h
0000h
Max. timeout for buffer write 2N times typical
25h
0004h
Max. timeout per individual block erase 2N times typical
26h
0000h
Max. timeout for full chip erase 2N times typical (00h = not supported)
Addresses
Data
Description
27h
0018h (WS128J)
0017h (WS064J)
Device Size = 2N byte
28h
29h
0001h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
0000h
Max. number of bytes in multi-byte write = 2N
(00h = not supported)
2Ch
0003h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
00FDh (WS128J)
007Dh (WS064J)
Erase Block Region 2 Information
32h
33h
34h
0000h
0001h
35h
36h
37h
38h
0007h
0000h
0020h
0000h
Erase Block Region 3 Information
39h
3Ah
3Bh
3Ch
0000h
Erase Block Region 4 Information
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