• <table id="cbern"></table>
  • <code id="cbern"><input id="cbern"></input></code>
    參數(shù)資料
    型號(hào): S71PL032J80BAW052
    廠商: SPANSION LLC
    元件分類: 存儲(chǔ)器
    英文描述: SPECIALTY MEMORY CIRCUIT, PBGA56
    封裝: 7 X 9 MM, 1.20 MM HEIGHT, FBGA-56
    文件頁(yè)數(shù): 149/188頁(yè)
    文件大小: 5078K
    代理商: S71PL032J80BAW052
    第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)第87頁(yè)第88頁(yè)第89頁(yè)第90頁(yè)第91頁(yè)第92頁(yè)第93頁(yè)第94頁(yè)第95頁(yè)第96頁(yè)第97頁(yè)第98頁(yè)第99頁(yè)第100頁(yè)第101頁(yè)第102頁(yè)第103頁(yè)第104頁(yè)第105頁(yè)第106頁(yè)第107頁(yè)第108頁(yè)第109頁(yè)第110頁(yè)第111頁(yè)第112頁(yè)第113頁(yè)第114頁(yè)第115頁(yè)第116頁(yè)第117頁(yè)第118頁(yè)第119頁(yè)第120頁(yè)第121頁(yè)第122頁(yè)第123頁(yè)第124頁(yè)第125頁(yè)第126頁(yè)第127頁(yè)第128頁(yè)第129頁(yè)第130頁(yè)第131頁(yè)第132頁(yè)第133頁(yè)第134頁(yè)第135頁(yè)第136頁(yè)第137頁(yè)第138頁(yè)第139頁(yè)第140頁(yè)第141頁(yè)第142頁(yè)第143頁(yè)第144頁(yè)第145頁(yè)第146頁(yè)第147頁(yè)第148頁(yè)當(dāng)前第149頁(yè)第150頁(yè)第151頁(yè)第152頁(yè)第153頁(yè)第154頁(yè)第155頁(yè)第156頁(yè)第157頁(yè)第158頁(yè)第159頁(yè)第160頁(yè)第161頁(yè)第162頁(yè)第163頁(yè)第164頁(yè)第165頁(yè)第166頁(yè)第167頁(yè)第168頁(yè)第169頁(yè)第170頁(yè)第171頁(yè)第172頁(yè)第173頁(yè)第174頁(yè)第175頁(yè)第176頁(yè)第177頁(yè)第178頁(yè)第179頁(yè)第180頁(yè)第181頁(yè)第182頁(yè)第183頁(yè)第184頁(yè)第185頁(yè)第186頁(yè)第187頁(yè)第188頁(yè)
    62
    S29PL127J/S29PL064J/S29PL032J for MCP
    S29PL127_064_032J_00_A1 May 21, 2004
    Prelimin ary
    Command Definitions
    Writing specific address and data commands or sequences into the command
    register initiates device operations. Table 17 defines the valid register command
    sequences. Writing incorrect address and data values or writing them in the
    improper sequence may place the device in an unknown state. A reset com-
    mand is then required to return the device to reading array data.
    All addresses are latched on the falling edge of WE# or CE#, whichever happens
    later. All data is latched on the rising edge of WE# or CE#, whichever happens
    first. Refer to the AC Characteristic section for timing diagrams.
    Reading Array Data
    The device is automatically set to reading array data after device power-up. No
    commands are required to retrieve data. Each bank is ready to read array data
    after completing an Embedded Program or Embedded Erase algorithm.
    After the device accepts an Erase Suspend command, the corresponding bank
    enters the erase-suspend-read mode, after which the system can read data from
    any non-erase-suspended sector within the same bank. The system can read
    array data using the standard read timing, except that if it reads at an address
    within erase-suspended sectors, the device outputs status data. After completing
    a programming operation in the Erase Suspend mode, the system may once
    again read array data with the same exception. See the Erase Suspend/Erase Re-
    sume Commands section for more information.
    The system must issue the reset command to return a bank to the read (or erase-
    suspend-read) mode if DQ5 goes high during an active program or erase opera-
    tion, or if the bank is in the autoselect mode. See the next section, Reset
    Command, for more information.
    tion for more information. The AC Characteristic table provides the read
    parameters, and Figure 12 shows the timing diagram.
    Reset Command
    Writing the reset command resets the banks to the read or erase-suspend-read
    mode. Address bits are don’t cares for this command.
    The reset command may be written between the sequence cycles in an erase
    command sequence before erasing begins. This resets the bank to which the sys-
    tem was writing to the read mode. Once erasure begins, however, the device
    ignores reset commands until the operation is complete.
    The reset command may be written between the sequence cycles in a program
    command sequence before programming begins. This resets the bank to which
    the system was writing to the read mode. If the program command sequence is
    written to a bank that is in the Erase Suspend mode, writing the reset command
    returns that bank to the erase-suspend-read mode. Once programming begins,
    however, the device ignores reset commands until the operation is complete.
    The reset command may be written between the sequence cycles in an autoselect
    command sequence. Once in the autoselect mode, the reset command must be
    written to return to the read mode. If a bank entered the autoselect mode while
    in the Erase Suspend mode, writing the reset command returns that bank to the
    erase-suspend-read mode.
    相關(guān)PDF資料
    PDF描述
    S71PL032J80BAW074 SPECIALTY MEMORY CIRCUIT, PBGA56
    S71PL032JA0BAW074 SPECIALTY MEMORY CIRCUIT, PBGA56
    S71PL032JA0BFW0F4 SPECIALTY MEMORY CIRCUIT, PBGA56
    S29JL032H60TAI023 2M X 16 FLASH 3V PROM, 60 ns, PDSO48
    S29AL016D70BAI022 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    S71PL032J80BAW0Z0 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Based MCPs
    S71PL032J80BAW0Z2 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Based MCPs
    S71PL032J80BAW0Z3 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Based MCPs
    S71PL032J80BAW9Z0 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Based MCPs
    S71PL032J80BAW9Z2 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Based MCPs