參數(shù)資料
型號(hào): S9004P2CT
廠商: DIODES INC
元件分類: 參考電壓二極管
英文描述: 30A SCHOTTKY BARRIER RECTIFIER
中文描述: 30 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 1/2頁
文件大?。?/td> 62K
代理商: S9004P2CT
D
S
23027 Rev. P-5
1 of 2
S9004P2CT
S9004P2CT
30A SCHOTTKY BARRIER RECTIFIER
Features
L
M
A
N
P
D
E
K
C
B
J
G
H H
TO-220AB
Min
Dim
A
B
C
D
E
G
H
J
K
L
M
N
P
All Dimensions in mm
Max
14.22
15.88
9.65
10.67
2.54
3.43
5.84
6.86
6.25
12.70
14.73
2.29
2.79
0.51
1.14
3.53
4.09
3.56
4.83
1.14
1.40
0.30
0.64
2.03
2.92
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
@ T
A
= 25 C unless otherwise specified
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material - UL Flammability
Classification 94V-0
Mechanical Data
Characteristic
Symbol
V
RRM
V
RWM
V
R
S9004P2CT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Minimum Avalanche Breakdown Voltage
per element (Note 1)
Average Rectified Output Current
(Note 1 & 3)
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method) (Note 3)
Instantaneous Forward Voltage Drop
60
V
@ 1.5A
70
V
I
O
30
A
I
FSM
250
A
@ i
F
= 15A
@ T
C
= 25 C
@ T
C
= 125 C
v
FM
0.56
2.0
150
470
10000
V
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance per element (Note 2)
Voltage Rate of Change at Rated DC Blocking Voltage
Non-repetitive Avalanche Energy
(Constant Current During a 20 s pulse)
Typical Thermal Resistance Junction to Case per element
(Note 1)
Operating and Storage Temperature Range
I
RM
mA
C
j
pF
V/ s
dv/dt
@ T
C
= 125 C
W
10
mJ
R
Jc
1.5
K/W
T
j,
T
STG
-60 +150
C
Notes:
1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. I
FSM
and I
O
values shown are for entire package. For any single diode the values are one half of listed value.
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Weight: 2.24 grams (approx)
Mounting Position: Any
Marking: Type Number
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