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參數(shù)資料
| 型號： | SA1638BE |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 無繩電話/電話 |
| 英文描述： | Ceramic Multilayer Capacitor; Capacitance:47pF; Capacitance Tolerance:+/- 5 %; Working Voltage, DC:50V; Dielectric Characteristic:C0G/NP0; Package/Case:1206; Series:VJ; Features:Multilayer Ceramic Chip Capacitor |
| 中文描述： | TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, PQFP48 |
| 文件頁數(shù)： | 7/26頁 |
| 文件大?。?/td> | 271K |
| 代理商： | SA1638BE |
Philips Semiconductors
Product specification
SA1638
Low voltage IF I/Q transceiver
1997 Sept 03
7
AC ELECTRICAL CHARACTERISTICS
(Continued)
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
TYP
UNITS
MIN
–3
σ
+3
σ
MAX
IF Transmit Modulator (continued)
Noise density at 600kHz
Noise density at 10MHz
t
ON
Turn ON time
t
OFF
Turn OFF time
IF Receiver (R = 36k
between pins RESA and RESB)
RInRx
Differential input impedance
ROutRx
Output impedance
Output common mode voltage
f3dB
Low pass filter -3dB bandwidth
Low pass filter attenuation:
200kHz
400kHz
600kHz
6.5MHz
13.0MHz
|ITxIn| = |ITxInX| = |QTxIn| =
|QTxInX| = 0.75V
PEAK
PdTx = LO, transmit signal to 90%
PdTx = HI, transmit signal to 10%
-130
-133
-129
-131
5
5
-128
-129
dBc/Hz
μ
s
μ
s
f
IN
= 400MHz
5 || 0.6
1
V
REF
83
k
|| pF
k
V
kHz
70
90
6.5
30
8.9
38.1
10.7
45
70
>80
>80
12.5
51.9
dB
VG
Voltage gain
Differential output PD into GSM
baseband relative to 1200
source EMF
1200
source and external
matching resistor and inductor
43
49.4
51
52.7
58
dB
NF
Noise figure
8
5.7
7.0
8.3
dB
Channel matching:
Gain
Phase
f
IN
= 400.005MHz
-1.5
-0.26
0.0
-25
10 (700)
2.0
1.5
dB
degrees
mV
μ
A
V
Output DC offset
2
Output drive current at each pin
Minimum differential output swing
Input 1dB compression point:
Differential, DCRES=562k
Source (Sink)
-60
60
I
OUT
V
OUT
P
-1dB
In band
200kHz
400kHz
600kHz
1200
source EMF
-59
-54
-55.3
-49.3
-53
-47
-47
-47
-50.7
-44.8
-47
-40
dBV
t
ON
Turn ON time
3
POnRx = HI, to baseband signal
out
POnRx = LO, to no baseband
signal out
2
μ
s
t
OFF
Turn OFF time
2
μ
s
IF Synthesizer
f
LO
Local oscillator input frequency
range
9
140
800
MHz
Z
LOIN
Differential input impedance
Between pins LO
and LO
IN
X, f
IN
= 800MHz
Single-ended
Referred to 50
276 || 0.6
|| pF
V
LOIN
LO peak input voltage range
50
100
mV
Programmable divider:
Division range
Step size
Reference clock input frequency
Differential input impedance
CLK
IN
peak input voltage range
Charge pump input reference
current
Charge pump output current:
c0...c2 = 000
c0...c2 = 111
Step size
64
1
511
f
CLKIN
Z
CLKIN
V
CLKIN
V
CLKIN
= 100mV
PEAK
Between pins ClkIn and ClkInX
Single-ended, referred to 50
52
MHz
k
|| pF
mV
10 || 1.0
50
400
I
REF
31.2
μ
A
| I
CP
|
I
REF
=31.2
μ
A,
V
CP
= V
CC
CP/2
0.425
0.85
0.045
0.487
0.979
0.062
0.5
1.0
0.071
0.513
1.021
0.08
0.575
1.15
0.105
mA
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