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參數(shù)資料
| 型號： | SCM6946 |
| 廠商： | Motorola, Inc. |
| 英文描述： | 512Kx8 Bit Static Random Access Memory(512Kx8位靜態(tài)RAM) |
| 中文描述： | 512Kx8位靜態(tài)隨機存取存儲器（512Kx8位靜態(tài)RAM）的 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 171K |
| 代理商： | SCM6946 |
MCM6946
SCM6946
3
MOTOROLA FAST SRAM
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V – 5%, + 10%, TA = 0 to 70
°
C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage (Operating Voltage Range)
VDD
VIH
VIL
3.135
3.3
3.6
V
Input High Voltage
2.2
—
VDD + 0.3**
0.8
V
Input Low Voltage
– 0.5
*
—
V
*VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width
≤
2.0 ns).
**VIH (max) = VDD + 0.3 V dc; VIH (max) = VDD + 2.0 V ac (pulse width
≤
2.0 ns).
DC CHARACTERISTICS
Parameter
Symbol
Min
Max
Unit
Input Leakage Current (All Inputs, Vin = 0 to VDD)
Output Leakage Current (E = VIH, Vout = 0 to VDD)
Output Low Voltage (IOL = + 8.0 mA)
Output High Voltage (IOH = – 4.0 mA)
Ilkg(I)
Ilkg(O)
VOL
VOH
—
±
1.0
μ
A
—
±
1.0
μ
A
—
0.4
V
2.4
—
V
POWER SUPPLY CURRENTS
Parameter
Symbol
0 to 70
°
C
Unit
AC Active Supply Current
(Iout = 0 mA, VDD = Max)
SCM6946–8: tAVAV = 8 ns
MCM6946–10: tAVAV = 10 ns
MCM6946–12: tAVAV = 12 ns
MCM6946–15: tAVAV = 15 ns
SCM6946–8: tAVAV = 8 ns
MCM6946–10: tAVAV = 10 ns
MCM6946–12: tAVAV = 12 ns
MCM6946–15: tAVAV = 15 ns
IDD
195
185
180
175
mA
AC Standby Current (VDD = Max, E = VIH,
No Other Restrictions on Other Inputs)
ISB1
55
50
50
45
mA
CMOS Standby Current (E
≥
VDD – 0.2 V, Vin
≤
VSS + 0.2 V or
≥
VDD – 0.2 V)
(VDD = Max, f = 0 MHz)
ISB2
20
mA
CAPACITANCE
(f = 1.0 MHz, dV = 3.3 V, TA = 25
°
C, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol
Typ
Max
Unit
Input Capacitance
All Inputs Except Clocks and DQs
E, G, W
Cin
Cck
4
5
6
8
pF
Input/Output Capacitance
DQ
CI/O
5
8
pF
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