參數(shù)資料
型號: SDB10S30
廠商: INFINEON TECHNOLOGIES AG
英文描述: Silicon Carbide Schottky Diode
中文描述: 碳化硅肖特基二極管
文件頁數(shù): 2/4頁
文件大?。?/td> 243K
代理商: SDB10S30
KSD-3031-000
2
SDB10A40
Absolute maximum ratings
Ta=25
°
C
Characteristic
Symbol
Rating
Unit
Peak reverse voltage
V
RM
40
V
Reverse voltage
V
R
40
V
Average Rectified Forward current
I
F
1.0
A
Non-repetitive peak surge forward current
I
FSM
30
A
Junction temperature
T
j
T
stg
150
°
C
Storage temperature
Electrical Characteristics
Ta=25
°
C
Characteristic
Symbol
Test Condition
I
F
=1
A
-55~150
°
C
Min. Typ. Max.
Unit
Forward voltage
V
F
-
0.5
0.55
V
Reverse current
I
R
V
R
=40V
-
-
200
μ
A
Total capacitance
C
T
V
R
=10V, f=1MH
Z
-
30
-
pF
* Pulse Test : Pulse width
250us, Duty
2%
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