參數(shù)資料
型號： SFW9610
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Advanced Power MOSFET
中文描述： 1.75 A, 200 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： D2PAK-3
文件頁數(shù)： 2/9頁
文件大?。?/td> 304K
代理商： SFW9610
P-CHANNEL
POWER MOSFET
Electrical Characteristics (T
C=25
oC unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain( “ Miller “ ) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
BV
DSS
BV/T
J
V
GS(th)
R
DS(on)
I
GSS
I
DSS
V
V/
oC
V
nA
A
pF
ns
nC
--
V
GS=0V,ID=-250A
I
D=-250A
See Fig 7
V
DS=-5V,ID=-250A
V
GS=-30V
V
GS=30V
V
DS=-200V
V
DS=-160V,TC=125
oC
V
GS=-10V,ID=-0.9A
V
DS=-40V,ID=-0.9A
V
DD=-100V,ID=-1.75A,
R
G=18
See Fig 13
V
DS=-160V,VGS=-10V,
I
D=-1.75A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
V
GS=0V,VDS=-25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
A
V
ns
C
Integral reverse pn-diode
in the MOSFET
T
J=25
oC,I
S=-1.75A,VGS=0V
T
J=25
oC,I
F=-1.75A
di
F/dt=100A/s
O
4
O
4
O
4
O
4
O
5
O
5
O
4
O
1
O
4
SFW/I9610
-200
--
-2.0
--
-0.2
--
45
16
10
20
27
12
9
1.8
4.8
--
-4.0
-100
100
-10
-100
3.0
--
285
65
25
30
50
65
35
11
--
1.1
220
--
110
0.42
-1.75
-7.0
-4.0
--
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=70mH, I
AS=-1.75A, V DD=-50V, RG=27*, Starting T J =25
oC
I
SD
-1.75A, di/dt
250A/
s, V
DD
BV
DSS , Starting T J =25
oC
Pulse Test : Pulse Width = 250
s, Duty Cycle
2%
Essentially Independent of Operating Temperature
<
_
<
_
<
_
<
_
O
1
O
2
O
3
O
4
O
5
相關(guān)PDF資料
PDF描述
SFW9614 ADVANCED POWER MOSFET
SFW9620 Advanced Power MOSFET
SFW9630 Advanced Power MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SFW9610TM 功能描述:MOSFET P-CH/200V/1.8A/3OHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SFW9614 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:ADVANCED POWER MOSFET
SFW9614TM 功能描述:MOSFET P-CH/250V/1.6A/4OHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SFW9620 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET
SFW9620TM 功能描述:MOSFET PCh/200V/3.5a/1.5Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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