參數(shù)資料
型號: SFW9610
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Advanced Power MOSFET
中文描述: 1.75 A, 200 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: D2PAK-3
文件頁數(shù): 3/9頁
文件大小: 304K
代理商: SFW9610
P-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
Fig 6. Gate Charge vs. Gate-Source Voltage
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 4. Source-Drain Diode Forward Voltage
Fig 3. On-Resistance vs. Drain Current
SFW/I9610
10
-1
10
0
10
1
10
-1
10
0
@ Notes :
1. 250
s Pulse Test
2. T
C
= 25
oC
V
GS
Top :
- 15 V
- 10V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
-I
D
,
Drain
Current
[A]
-V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
-1
10
0
25
oC
150
oC
- 55
oC
@ Notes :
1. V
GS
= 0 V
2. V
DS
= -40 V
3. 250
s Pulse Test
-I
D
,
Drain
Current
[A]
-V
GS , Gate-Source Voltage
[V]
0
1
2
3
4
5
6
7
0
2
4
6
8
10
@ Note : T
J
= 25
oC
V
GS
= -20 V
V
GS
= -10 V
R
DS(on)
,
[
]
Drain-Source
On-Resistance
-I
D
, Drain Current [A]
0.5
1.0
1.5
2.0
2.5
3.0
10
-1
10
0
150
oC
25
oC
@ Notes :
1. V
GS
= 0 V
2. 250
s Pulse Test
-I
DR
,
Reverse
Drain
Current
[A]
-V
SD
, Source-Drain Voltage [V]
0
2
4
6
8
10
0
5
10
V
DS
= -160 V
V
DS
= -100 V
V
DS
= -40 V
@ Notes : I
D
=-1.75 A
-V
GS
,
Gate-Source
Voltage
[V]
Q
G
, Total Gate Charge [nC]
10
0
10
1
0
100
200
300
400
C
iss
= C
gs
+ C
gd
( C
ds
= shorted )
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
@ Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitance
[pF]
-V
DS
, Drain-Source Voltage [V]
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