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參數(shù)資料
| 型號(hào)： | SGB-4333 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | IC AMP AUDIO STER AB 8DIP |
| 中文描述： | 直流- 3 GHz有源偏置增益模塊 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 139K |
| 代理商： | SGB-4333 |
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product
for use in life-support devices and/or systems.
303 South Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-103087 Rev E
Sirenza Microdevices’ SGB-4333 is a high performance
SiGe HBT MMIC amplifier utilizing a Darlington configura-
tion with an active bias network. The active bias network
provides stable current over temperature and process Beta
variations. Designed to run directly from a 3V to 5V supply
the SGB-4333 does not require a drop resistor as com-
pared to typical Darlington amplifiers. This robust amplifier
features a Class 1C ESD rating, low thermal resistance ,
and unconditional stability. The SGB-4333 product is
designed for high linearity 3V gain block applications that
require small size and minimal external components. It is
on chip matched to 50 ohm and an external bias inductor
choke is required for the application band.
Functional Block Diagram
Key Specifications
Symbol
Parameters: Test Conditions
Z
0
= 50
, V
CC
= 3.0V, Ic = 56mA, T
= 30oC)
Frequency of Operation
Unit
Min.
Typ.
Max.
f
O
MHz
DC
3000
S
21
Small Signal Gain – 850MHz
dB
17.5
Small Signal Gain – 1950MHz
13.0
14.5
16.0
Small Signal Gain – 2400MHz
14.0
P
1dB
Output Power at 1dB Compression – 850MHz
dBm
11.5
Output Power at 1dB Compression – 1950MHz
8.5
10.0
Output Power at 1dB Compression – 2400MHz
9.5
OIP3
Output IP3 – 850MHz
25.0
Output IP3 – 1950MHz
dB
20.0
22.5
Output IP3 – 2400MHz
21.0
IRL
Input Return Loss @ 1950MHz
dB
8.5
10.5
ORL
Output Return Loss @1950MHz
dB
8.5
10.5
Ic
Current
mA
48
56
62
NF
Noise Figure @1950MHz
dB
4.0
5.0
R
th, j-l
Thermal Resistance (junction - lead)
oC/W
76
SGB-4333
DC – 3 GHz Active Bias Gain Block
Product Features
High reliability SiGe HBT Technology
Robust Class 1C ESD
Simple and small size
P1dB = 10.0dBm @ 1950MHz
IP3 = 22.5 dBm @ 1950MHz
Low Thermal Resistance = 76 C/W
Applications
3V Battery operated applications
LO buffer amp
RF pre-driver and RF receive path
Product Description
V
NC
NC
G
N
NC
NC
V
N
N
NC
RFIN
NC
RFOUT
N
N
Active
Bias
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SGB-4333Z | 制造商:SIRENZA 制造商全稱:SIRENZA 功能描述:DC - 3 GHz Active Bias Gain Block |
| SGB-4533 | 制造商:RF Micro Devices Inc 功能描述:IC AMP HBT SIGE 3GHZ 16-QFN |
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| SGB-6433 | 制造商:RF Micro Devices Inc 功能描述:IC AMP HBT SIGE 3.5GHZ 16-QFN |
| SGB-6433Z | 制造商:SIRENZA 制造商全稱:SIRENZA 功能描述:DC-3.5 GHz Active Bias Gain Block |
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