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參數(shù)資料
| 型號(hào)： | SI1917EDH |
| 廠(chǎng)商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual P-Channel 12-V (D-S) MOSFET |
| 中文描述： | 雙P溝道12 V的（副）MOSFET的 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 43K |
| 代理商： | SI1917EDH |
Si1917EDH
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71414
S-03174
—
Rev. A, 07-Mar-01
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
–
100 A
–
0.45
V
V
DS
= 0 V, V
GS
=
4.5 V
1.5
A
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
12 V
10
mA
V
DS
=
–
9.6 V, V
GS
= 0 V
–
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
–
9.6 V, V
GS
= 0 V, T
J
= 85 C
–
5
A
On-State Drain Current
a
I
D(on)
V
DS
=
–
5 V, V
GS
=
–
4.5 V
–
2
A
V
GS
=
–
4.5 V, I
D
=
–
1.0 A
0.300
0.370
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
=
–
2.5 V, I
D
=
–
0.81
A
0.470
0.575
V
GS
=
–
1.8 V, I
D
=
–
0.2
A
0.660
0.800
Forward Transconductance
a
g
fs
V
DS
=
–
10 V, I
D
=
–
1.0 A
1.7
S
Diode Forward Voltage
a
V
SD
I
S
=
–
0.47 A, V
GS
= 0 V
–
0.85
–
1.2
V
Dynamic
b
Total Gate Charge
Q
g
1.3
2.0
Gate-Source Charge
Q
gs
V
DS
=
–
6 V,
V
GS
=
–
4.5 V, I
D
=
–
1.0 A
0.31
nC
Gate-Drain Charge
Q
gd
0.31
Turn-On Delay Time
t
d(on)
0.17
0.26
Rise Time
t
r
V
=
–
6 V, R
L
= 12
–
0.5 A, V
GEN
=
–
4.5 V, R
G
= 6
0.47
0.71
Turn-Off Delay Time
t
d(off)
I
D
0.96
1.4
s
Fall Time
t
f
1.0
1.5
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
0.001
100
10,000
Gate Current vs. Gate-Source Voltage
0
2
4
6
8
10
0
4
8
12
16
Gate-Current vs. Gate-Source Voltage
V
GS
–
Gate-to-Source Voltage (V)
0.1
1
10
1,000
V
GS
–
Gate-to-Source Voltage (V)
–
I
G
A
0
3
9
12
15
T
J
= 25 C
T
J
= 150 C
–
I
G
0.01
6
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI1917EDH_08 | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Dual P-Channel 12-V (D-S) MOSFET |
| SI1917EDH-T1 | 功能描述:MOSFET 10V 1.15A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1917EDH-T1-E3 | 功能描述:MOSFET 10V 1.15A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1917EDH-T1-GE3 | 制造商:Vishay Intertechnologies 功能描述: |
| SI1917EDWF | 制造商:Vishay Siliconix 功能描述:SI1917E IN WAFER FORM - Tape and Reel |
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