C1,C4
參數(shù)資料
型號(hào)： SI3016-BS
廠商： Silicon Laboratories Inc
文件頁(yè)數(shù)： 2/50頁(yè)
文件大?。?/td> 0K
描述： IC LINE-SIDE DAA 16SOIC
標(biāo)準(zhǔn)包裝： 48
數(shù)據(jù)格式： V.90
電源電壓： 3.3V，5V
安裝類(lèi)型： 表面貼裝
封裝/外殼： 16-SOIC（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝： 16-SOIC N
包裝： 管件
Si3016
10
Rev. 1.0
2. Bill of Materials
Table 7. Si3016 Global Component Values
Component
Value
Supplier(s)
C1,C41
150 pF, 3 kV, X7R,±20%
Novacap, Venkel, Johanson, Murata, Panasonic
C2, C31, C32
Not Installed
C3, C132
0.22 F, 16 V, X7R, ±20%
C5
0.1 F, 50 V, Elec/Tant, ±20%
C6,C16
0.1 F, 16 V, X7R, ±20%
C7,C8
560 pF, 250 V, X7R, ±20%
Novacap, Johanson, Murata, Panasonic
C9
10 nF, 250 V, X7R, ±20%
C12
1.0 F, 16 V, Tant, ±20%
Panasonic
C14
0.68 F, 16 V, X7R/Elec/Tant, ±20%
C18,C19
3.9 nF, 16 V, X7R, ±20%
C20
0.01 F, 16 V, X7R, ±20%
C22
1800 pF, 50 V, X7R, ±20%
C24,C251
1000 pF, 3 kV, X7R, ±10%
C303
Not Installed
D1,D24
Dual Diode, 300 V, 225 mA
Central Semiconductor
D3,D4
BAV99 Dual Diode, 70 V, 350 mW
Diodes Inc., OnSemiconductor, Fairchild
FB1,FB2
Ferrite Bead
Murata
L1, L25
330
μH, DCR < 3 Ω, 120 mA, ±10%
Taiyo-Yuden, ACT, Transtek Magnetics, Cooper Electronics
Q1,Q3
A42, NPN, 300 V
OnSemiconductor, Fairchild
Q2
A92, PNP, 300 V
OnSemiconductor, Fairchild
Q46
BCP56T1, NPN, 80 V, 1/2 W
OnSemiconductor, Fairchild
RV1
Sidactor, 275 V, 100 A
Teccor, ST Microelectronics, Microsemi, TI
RV27
Not Installed
R28
402
Ω, 1/16 W, ±1%
R5
100 k
Ω, 1/16 W, ±1%
R6
120 k
Ω, 1/16 W, ±5%
R7,R8,R15,R16,R17,R199
5.36 k
Ω, 1/4 W, ±1%
R9,R10
56 k
Ω, 1/10 W, ±5%
R11
9.31 k
Ω, 1/16 W, ±1%
R12
78.7
Ω, 1/16 W, ±1%
R13
215
Ω, 1/16 W, ±1%
R18
2.2 k
Ω, 1/10 W, ±5%
R24
150
Ω, 1/16 W, ±5%
R25,R26
10 M
Ω, 1/16 W, ±5%
R27,R28
10
Ω, 1/10 W, ±5%
U1
Si3021
Silicon Labs
U2
Silicon Labs System-Side Device
Silicon Labs
Z1
Zener Diode, 43 V, 1/2 W
Vishay, Motorola, Rohm
Z4,Z5
Zener Diode, 5.6 V, 1/2 W
Vishay, Motorola, Rohm
Notes:
1.
Y2 class capacitors are needed for the Nordic requirements of EN60950 and may also be used to achieve surge performance of 5 kV or better.
2.
C13 is used to ensure compliance with on-hook pulse dialing and spark quenching requirements in countries, such as Australia and South Africa. If this
is not a concern, a 0.1 F cap may be used.
3.
Install only if needed for improved radiated emissions performance (10 pF, 16 V, NPO, ±10%).
4.
Several diode bridge configurations are acceptable (suppliers include General Semi., Diodes Inc.).
5.
See Appendix B for additional requirements.
6.
Q4 may require copper on board to meet 1/2 W power requirement. (Contact manufacturer for details.)
7.
RV2 can be installed to improve performance from 2500 V to 3500 V for multiple longitudinal surges (270 V, MOV).
8.
If supporting +3.2 dBFS voice applications, R2 should be 243
Ω and set the FULLSCALE bit (Reg 18[7]).
9.
The R7, R8, R15, and R16, R17, and R19 resistors may each be replaced with a single resistor of 1.62 k
Ω, 3/4 W, ±1%.
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參數(shù)描述
SI3016-BSR 制造商:Silicon Laboratories Inc 功能描述:
Si3016-F-FS 功能描述:電信線路管理 IC Line-Side device for processors RoHS:否 制造商:STMicroelectronics 產(chǎn)品:PHY 接口類(lèi)型:UART 電源電壓-最大:18 V 電源電壓-最小:8 V 電源電流:30 mA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VFQFPN-48 封裝:Tray
SI3016-F-FSR 功能描述:電信線路管理 IC Line-Side device Processor Integrated RoHS:否 制造商:STMicroelectronics 產(chǎn)品:PHY 接口類(lèi)型:UART 電源電壓-最大:18 V 電源電壓-最小:8 V 電源電流:30 mA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VFQFPN-48 封裝:Tray
SI3016-F-KS 制造商:Silicon Laboratories Inc 功能描述:
SI3016-F-KSR 制造商:Silicon Laboratories Inc 功能描述:
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