(VDD
參數(shù)資料
型號: SI5338B-A-GM
廠商: Silicon Laboratories Inc
文件頁數(shù): 34/44頁
文件大小: 0K
描述: IC CLK GEN QUAD 350MHZ 24-QFN
標(biāo)準(zhǔn)包裝: 490
系列: MultiSynth™
類型: 時鐘發(fā)生器
PLL:
輸入: CML,HCSL,HSCL,LVDS,LVPECL,晶體
輸出: CMOS,HCSL. HSTL. LVDS. LVPECL. SSTL
電路數(shù): 1
比率 - 輸入:輸出: 2:4
差分 - 輸入:輸出: 是/是
頻率 - 最大: 350MHz
除法器/乘法器: 是/是
電源電壓: 1.71 V ~ 3.63 V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 24-VFQFN 裸露焊盤
供應(yīng)商設(shè)備封裝: 24-QFN(4x4)
包裝: 托盤
產(chǎn)品目錄頁面: 628 (CN2011-ZH PDF)
配用: 336-1747-ND - KIT PROG FIELD SI5338/4/0
336-1556-ND - BOARD EVALUATION SI5338
其它名稱: 336-1554-5
Si5338
4
Rev. 1.3
1. Electrical Specifications
Table 1. Recommended Operating Conditions
(VDD = 1.8 V –5% to +10%, 2.5 V ±10%, or 3.3 V ±10%, TA = –40 to 85 °C)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Ambient Temperature
TA
–40
25
85
°C
Core Supply Voltage
VDD
2.97
3.3
3.63
V
2.25
2.5
2.75
V
1.71
1.8
1.98
V
Output Buffer Supply
Voltage
VDDOn
1.4
3.63
V
Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at nominal supply voltages and an operating temperature of 25 °C unless otherwise noted.
Table 2. Absolute Maximum Ratings1
Parameter
Symbol
Test Condition
Value
Unit
DC Supply Voltage
VDD
–0.5 to 3.8
V
Storage Temperature Range
TSTG
–55 to 150
°C
ESD Tolerance
HBM
(100 pF, 1.5 k
)
2.5
kV
ESD Tolerance
CDM
550
V
ESD Tolerance
MM
175
V
Latch-up Tolerance
JESD78 Compliant
Junction Temperature
TJ
150
°C
Peak Soldering Reflow Temperature2
260
°C
Notes:
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be
restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2. Refer to JEDEC J-STD-020 standard for more information.
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