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參數(shù)資料
| 型號(hào)： | Si6423DQ |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 12-V (D-S) MOSFET |
| 中文描述： | P溝道12 V的（副）MOSFET的 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 42K |
| 代理商： | SI6423DQ |
Si6423DQ
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72257
S-31419—Rev. A, 07-Jul-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -400 A
-0.40
-0.8
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -9.6 V, V
GS
= 0 V
-1
A
V
DS
= -9.6 V, V
GS
= 0 V, T
J
= 70 C
-10
On-State Drain Current
a
I
D(on)
V
DS
-5 V, V
GS
= -4.5 V
-20
A
V
GS
= -4.5 V, I
D
= -9.5 A
0.0068
0.0085
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= -2.5 V, I
D
= -8.5
A
0.0085
0.0106
V
GS
= -1.8 V, I
D
= -7.5
A
0.0112
0.014
Forward Transconductance
a
g
fs
V
DS
= -15 V, I
D
= -9.5 A
45
S
Diode Forward Voltage
a
V
SD
I
S
= -1.3 A, V
GS
= 0 V
-0.58
-1.1
V
Dynamic
b
Total Gate Charge
Q
g
74
110
Gate-Source Charge
Q
gs
V
DS
= -6 V,
V
GS
= -5 V, I
D
= -9.5 A
9.0
nC
Gate-Drain Charge
Q
gd
19
Gate Resistance
R
g
3.6
Turn-On Delay Time
t
d(on)
50
75
Rise Time
t
r
V
= -6 V, R
= 6
-1 A, V
GEN
= -4.5 V, R
G
= 6
75
110
Turn-Off Delay Time
t
d(off)
I
D
270
400
ns
Fall Time
t
f
200
300
Source-Drain Reverse Recovery Time
t
rr
I
F
= -1.3 A, di/dt = 100 A/ s
160
250
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
6
12
18
24
30
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
6
12
18
24
30
0
1
2
3
4
5
V
GS
= 5 thru 2 V
T
C
= 125 C
-55 C
25 C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
1.5 V
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| SI6423DQ_05 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 12-V (D-S) MOSFET |
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| SI6426 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:20V N-Channel PowerTrench MOSFET |
| SI6426DQ | 功能描述:MOSFET 20V/8V NCh MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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