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參數(shù)資料
| 型號： | SI6466DQ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 7.8 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TSSOP-8 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 161K |
| 代理商： | SI6466DQ |
November 2001
2001 Fairchild Semiconductor Corporation
Si6466DQ Rev C(W)
Si6466DQ
20V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (2.5V to 12V).
Applications
Battery protection
DC/DC conversion
Power management
Load switch
Features
7.8 A, 20 V
RDS(ON) = 15 m
@ VGS = 4.5 V
RDS(ON) = 22 m
@ VGS = 2.5 V
Extended VGSS range (±12V) for battery applications
High performance trench technology for extremely
low RDS(ON)
Low profile TSSOP-8 package
D
S
G
D
S
D
TSSOP-8
Pin 1
4
3
2
1
5
6
7
8
Absolute Maximum Ratings T
A=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
± 12
V
ID
Drain Current – Continuous
(Note 1)
7.8
A
– Pulsed
30
PD
Power Dissipation
(Note 1a)
1.4
W
(Note 1b)
1.1
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
87
°C/W
(Note 1b)
114
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
6466
Si6466DQ
13’’
16mm
3000 units
Si6466DQ
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參數(shù)描述 |
|---|---|
| SI6466DQ-T1 | 功能描述:MOSFET 20V 7.8A 1.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6466DQ-T1-E3 | 功能描述:MOSFET 20V 7.8A 1.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6467BDQ | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 1.8-V (G-S) MOSFET |
| SI6467BDQ_05 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 1.8-V (G-S) MOSFET |
| SI6467BDQ-T1 | 功能描述:MOSFET 12V 8.0A 1.05W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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