參數(shù)資料
型號： SI6466DQ
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 7.8 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TSSOP-8
文件頁數(shù)： 2/5頁
文件大?。?/td> 161K
代理商： SI6466DQ
Si6466DQ Rev C(W)
Electrical Characteristics
T
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
ID = 250
A
20
V
BVDSS
TJ
Breakdown Voltage Temperature
Coefficient
ID = 250
A, Referenced to 25°C
14
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 20 V,
VGS = 0 V
1
A
VDS = 20 V, VGS = 0 V, TJ=55
°C
25
IGSSF
Gate–Body Leakage, Forward
VGS = 12 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –12 V,
VDS = 0 V
–100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS,
ID = 250
A
0.6
1.0
1.5
V
VGS(th)
TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250
A, Referenced to 25°C
–3.5
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 4.5 V,
ID = 7.8 A
VGS = 2.5 V,
ID = 6.3 A
12
19
15
22
m
ID(on)
On–State Drain Current
VGS = 10 V,
VDS = 5 V
20
A
gFS
Forward Transconductance
VDS = 10 V,
ID = 7.8 A
33
S
Dynamic Characteristics
Ciss
Input Capacitance
1320
pF
Coss
Output Capacitance
396
pF
Crss
Reverse Transfer Capacitance
VDS = 10 V,
V GS = 0 V,
f = 1.0 MHz
211
pF
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
7
14
ns
tr
Turn–On Rise Time
12
22
ns
td(off)
Turn–Off Delay Time
30
48
ns
tf
Turn–Off Fall Time
VDD = 10 V,
ID = 1 A,
VGS = 10 V,
RGEN = 6
11
20
ns
trr
Reverse Recovery Time
VGS = 0 V, IF = 1.5 A,
dIF/dt = 100A/
s
23
80
ns
Qg
Total Gate Charge
14
20
nC
Qgs
Gate–Source Charge
3
nC
Qgd
Gate–Drain Charge
VDS = 10 V,
ID = 7.8 A,
VGS = 4.5 V
4.5
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
1.5
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 1.5 A
(Note 2)
0.7
1.1
V
Notes:
1. R
θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC is guaranteed by design while RθCA is determined by the user's board design.
a)
87°C/W when
mounted on a 1in
2 pad
of 2 oz copper.
b)
114°C/W when mounted
on a minimum pad of 2 oz
copper.
c)
Scale 1 : 1 on letter size
paper
2.Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
Si6466DQ
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相關代理商/技術參數(shù)
參數(shù)描述
SI6466DQ-T1 功能描述:MOSFET 20V 7.8A 1.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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