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參數(shù)資料
| 型號(hào)： | SI6821DQ |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel, Reduced Qg, MOSFET with Schottky Diode |
| 中文描述： | P溝道，減少Q(mào)g和與MOSFET的肖特基二極管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 62K |
| 代理商： | SI6821DQ |
Si6821DQ
Vishay Siliconix
New Product
Document Number: 70791
S-56954—Rev. C, 01-Mar-99
www.vishay.com FaxBack 408-970-5600
2-1
P-Channel, Reduced Q
g
, MOSFET with Schottky Diode
V
DS
(V)
r
DS(on)
( )
I
D
(A)
–20
0.190 @ V
GS
= –4.5 V
0.280 @ V
GS
= –3.0 V
1.7
1.3
V
KA
(V)
V
F
(V)
Diode Forward Voltage
I
F
(A)
20
0.5 V @ 1 A
1.5
Si6821DQ
D
S
S
G
1
2
3
4
8
7
6
5
K
A
A
A
TSSOP-8
Top View
S
G
D
K
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage (MOSFET)
V
DS
V
KA
–20
V
Reverse Voltage (Schottky)
20
Gate-Source Voltage (MOSFET)
V
GS
12
Continuous Drain Current
(T
J
= 150 C) (MOSFET)
a, b
T
A
= 25 C
I
D
1.7
A
T
A
= 70 C
1.3
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)
a, b
I
DM
I
S
I
F
I
FM
8
–1.0
Average Foward Current (Schottky)
1.5
Pulsed Foward Current (Schottky)
30
Maximum Power Dissipation (MOSFET)
a, b
T
A
= 25 C
T
A
= 70 C
T
A
= 25 C
T
A
= 70 C
P
D
1.2
W
0.76
Maximum Power Dissipation (Schottky)
a, b
1.0
0.64
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Parameter
Device
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient (t
10 sec)
a
MOSFET
R
thJA
105
C/W
Schottky
125
Maximum Junction-to-Ambient (t = steady state)
a
MOSFET
115
Schottky
130
Notes
a.
b.
Surface Mounted on FR4 Board.
t
10 sec.
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| SI6862DQ-T1-E3 | 功能描述:MOSFET 20V 6.6A 1.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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