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參數(shù)資料
| 型號： | SI6880EDQ |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 1.8-V (G-S) Battery Switch, ESD Protection |
| 中文描述： | N溝道的1.8 V（GS）的電池開關(guān)，ESD保護 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 32K |
| 代理商： | SI6880EDQ |
Specification Comparison
Vishay Siliconix
Document Number: 72902
22-Mar-04
www.vishay.com
1
Si6880AEDQ vs. Si6880EDQ
Description:
Package:
Pin Out:
N-Channel, 1.8-V (G-S) Battery Switch with ESD Protection
TSSOP-8
Identical
Part Number Replacements:
Si6880AEDQ-T1 Replaces Si6880EDQ-T1
Si6880AEDQ-T1—E3 (Lead Free version) Replaces Si6880EDQ-T1
Summary of Performance:
The Si6880AEDQ is the replacement for the original Si6880EDQ; both parts perform identically including limits to the
parametric tables below.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Si6880AEDQ
Si6880EDQ
Unit
Drain-Source Voltage
V
DS
V
GS
20
20
V
Gate-Source Voltage
12
12
Continuous Drain Current
T
A
= 25 C
T
A
= 70 C
I
D
7.2
5.7
30
1.5
1.5
0.96
7.5
6
30
1.6
1.78
1.14
A
Pulsed Drain Current
Continuous Source Current (MOSFET Diode Conduction)
I
DM
I
S
Power Dissipation
T
A
= 25 C
T
A
= 70 C
P
D
W
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
T
j
and T
stg
R
thJA
55 to 150
84
55 to 150
70
C
C/W
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Si6880AEDQ
Si6880EDQ
Parameter
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Static
Gate-Threshold Voltage
V
G(th)
0.8
0.9
0.45
V
Gate Body Leakage
Gate-Body Leakage
V
GS
= 4.5 V
V
GS
= 12 V
I
GSS
1000
250
nA
10
10
mA
Zero Gate Voltage Drain Current
On-State Drain Current
I
DSS
I
D(on)
1
1
A
A
V
GS
= 4.5 V
V
GS
= 4.5 V
V
GS
= 2.5 V
V
GS
= 1.8 V
20
20
0.014
0.016
0.018
45
0.61
0.018
0.022
0.025
0.015
0.017
0.020
39
0.65
0.018
0.022
0.016
Drain-Source On-Resistance
r
Ds(on)
Forward Transconductance
Diode Forward Voltage
g
fs
V
SD
S
V
1.1
1.1
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching
Qg
Qgs
Qgd
22
2.0
3.6
35
27
3.0
5.5
40
nC
Turn-On Time
t
d(on)
t
r
t
d(off)
t
f
1.0
1.6
6
5.5
1.5
2.5
10
10
1.5
800
6
5.5
2.3
1200
10
10
s
Turn Off Time
Turn-Off Time
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Si6880EDQ | Specification Comparison |
| Si6901DQ | Bi-Directional P-Channel 12-V (D-S) MOSFET |
| SI6911DQ | Dual P-Channel 12-V (D-S) MOSFET |
| SI6911DQT-1 | Dual P-Channel 12-V (D-S) MOSFET |
| SI6946DQ | Dual N-Channel 2.5-V (G-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI6882EDQ-T1-E3 | 制造商:Vishay Semiconductors 功能描述: |
| SI68M100 | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:SNAP-IN MOUNT ALUMINUM ELECTROLYTIC |
| SI68M16 | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:SNAP-IN MOUNT ALUMINUM ELECTROLYTIC |
| SI68M160 | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:SNAP-IN MOUNT ALUMINUM ELECTROLYTIC |
| SI68M200 | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:SNAP-IN MOUNT ALUMINUM ELECTROLYTIC |
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