參數(shù)資料
型號: SI7456DP
廠商: Vishay Intertechnology,Inc.
元件分類: MOSFETs
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 30V的N溝道的PowerTrench MOSFET的
文件頁數(shù): 4/4頁
文件大?。?/td> 61K
代理商: SI7456DP
Si7456DP
Vishay Siliconix
www.vishay.com
4
Document Number: 71603
S-31989—Rev. D, 13-Oct-03
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
0.01
30
50
10
20
P
Single Pulse Power
Time (sec)
10
-3
10
-2
1
10
600
10
-1
10
-4
100
-1.5
-1.0
-0.5
0.0
0.5
-50
-25
0
25
50
75
100
125
150
I
D
= 250 A
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Threshold Voltage
V
V
G
T
J
- Temperature ( C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
N
T
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 52 C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
t
1
t
2
Notes:
P
DM
0.1
1
0.0001
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
N
T
1
600
10
40
0.1
100
0.001
0.01
相關PDF資料
PDF描述
SI7456DP-T1 30V N-Channel PowerTrench MOSFET
SI7458DP N-Channel 20-V (D-S) Fast Switching MOSFET
SI7461DP P-Channel 60-V (D-S) MOSFET
SI7461DP-T1-E3 P-Channel 60-V (D-S) MOSFET
SI7464DP N-Channel 6-V (D-S) Fast Switching MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
SI7456DP 制造商:Vishay Siliconix 功能描述:MOSFET N SO-8
SI7456DP_06 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 100-V (D-S) MOSFET
SI7456DP-T1 功能描述:MOSFET 100V 9.3A 5.2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7456DP-T1-E3 功能描述:MOSFET 100V 9.3A 5.2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7456DP-T1-E3 制造商:Vishay Siliconix 功能描述:MOSFET