參數(shù)資料
型號(hào): Si7501DN
廠商: Vishay Intertechnology,Inc.
英文描述: N- and p-channel VDS = 30 V pair
中文描述: NP溝道 VDS=30V 配對(duì);
文件頁(yè)數(shù): 8/8頁(yè)
文件大?。?/td> 87K
代理商: SI7501DN
Si7501DN
Vishay Siliconix
www.vishay.com
8
Document Number: 72173
S-32419—Rev. B, 24-Nov-03
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
NCHANNEL
10
3
10
2
1
10
600
10
1
10
4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
N
T
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
=65 C/W
3. T
JM
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
t
1
t
2
Notes:
P
DM
10
3
10
2
1
10
1
10
4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
N
T
相關(guān)PDF資料
PDF描述
SI7601DN P-Channel 20-V (D-S) MOSFET, Low-Threshold
SI7664DP Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI7705DN P-Channel 20-V (D-S) MOSFET,Low-Threshold
SI7802DN N-Channel 250-V (D-S) MOSFET
SI7806BDN N-Channel 30-V (D-S) Fast Switching MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI7501DN-T1-E3 功能描述:MOSFET COMPLEMENTARY 30-V (D-S) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7501DN-T1-GE3 功能描述:MOSFET N/P-Ch MOSFET 30V 51/35mohoms @10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI-7502 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:5-Phase Stepper Motor Driver ICs
SI750K 制造商:Thomas & Betts 功能描述:TWO PIECE SPLICE 750P1 AUTO SEIZE 制造商:Belden Inc 功能描述:
SI750K3 制造商:Thomas & Betts 功能描述:SPLICE AUTO SEIZE 制造商:Belden Inc 功能描述: