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參數(shù)資料
| 型號(hào)： | SI7705DN |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 20-V (D-S) MOSFET,Low-Threshold |
| 中文描述： | P通道20V（D-S）MOSFET 低閾值 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 55K |
| 代理商： | SI7705DN |
FEATURES
TrenchFET Power MOSFETS: 1.8-V Rated
Ultra-Low Thermal Resistance, PowerPAK
Package with Low 1.07-mm Profile
APPLICATIONS
Charger Switching
Si7705DN
Vishay Siliconix
New Product
Document Number: 71607
S-22520—Rev. B, 27-Jan-03
www.vishay.com
1
Single P-Channel 20-V (D-S) MOSFET With Schottky Diode
MOSFET PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.048 @ V
GS
= -4.5 V
0.068 @ V
GS
= -2.5 V
0.090 @ V
GS
= -1.8 V
- 6.3
-20
- 5.3
- 4.6
SCHOTTKY PRODUCT SUMMARY
V
KA
(V)
V
f
(V)
Diode Forward Voltage
I
F
(A)
20
0.48 V @ 0.5 A
1.0
K
A
S
G
D
P-Channel MOSFET
1
2
3
4
5
6
7
8
A
A
S
G
K
K
D
D
3.30 mm
3.30 mm
Bottom View
PowerPAK 1212-8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 sec
Steady State
Unit
Drain-Source Voltage (MOSFET and Schottky)
V
DS
V
KA
-20
Reverse Voltage (Schottky)
20
V
Gate-Source Voltage (MOSFET)
V
GS
8
T
A
= 25 C
- 6.3
-4.3
Continuous Drain Current
(T
J
= 150 C) (MOSFET)
a
T
A
= 85 C
I
D
-4.5
-3.1
Pulsed Drain Current (MOSFET)
I
DM
I
S
I
F
I
FM
-20
Continuous Source Current (MOSFET Diode Conduction)
a
-2.3
-1.1
A
Average Foward Current (Schottky)
1.0
Pulsed Foward Current (Schottky)
7
T
A
= 25 C
T
A
= 85 C
T
A
= 25 C
T
A
= 85 C
2.8
1.3
Maximum Power Dissipation (MOSFET)
a
1.5
0.7
P
D
2.0
1.1
W
Maximum Power Dissipation (Schottky)
a
1.0
0.6
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
Notes
a.
Surface Mounted on 1” x1” FR4 Board.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7705DN-T1 | 功能描述:MOSFET 20V 6.3A 2.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7705DN-T1-E3 | 功能描述:MOSFET 20V 6.3A 2.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7716ADN | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SI7716ADN-T1-GE3 | 功能描述:MOSFET 30V 16A 27.7W 13.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7718DN-T1-GE3 | 功能描述:MOSFET 30V 35A 52W 6.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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