參數(shù)資料
型號: SIGC42T170R2C
廠商: INFINEON TECHNOLOGIES AG
英文描述: IGBT Chip in NPT-technology
中文描述: 在不擴散核武器條約IGBT芯片技術(shù)
文件頁數(shù): 1/4頁
文件大?。?/td> 78K
代理商: SIGC42T170R2C
SIGC42T170R2C
Edited by INFINEON Technologies AI PS DD HV3, L 7341M, Edition 2, 04.09.2003
IGBT Chip in NPT-technology
FEATURES:
1700V NPT technology
280μm chip
positive temperature coefficient
easy paralleling
integrated gate resistor
This chip is used for:
chip only
Applications:
drives
G
C
E
Chip Type
V
CE
I
Cn
Die Size
Package
Ordering Code
Q67050-A4117-
A003
SIGC42T170R2C
1700V
17A
6.51 x 6.51 mm
2
sawn on foil
MECHANICAL PARAMETER:
Raster size
6.51 x 6.51
Area total / active
42.38 / 23.8
Emitter pad size
2x( 1.7x3.2)
Gate pad size
1.2 x 1.2
mm
2
Thickness
280
μm
Wafer size
150
mm
Flat position
90
deg
Max.possible chips per wafer
328 pcs
Passivation frontside
Photoimide
Emitter metalization
3200 nm Al Si 1%
Collector metalization
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
electrically conductive glue or solder
Wire bond
Al,
500μm
Reject Ink Dot Size
0.65mm ; max 1.2mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
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