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參數(shù)資料
| 型號(hào)： | SIGC54T60R3 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | IGBT-3 Chip |
| 中文描述： | IGBT的- 3芯片 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 91K |
| 代理商： | SIGC54T60R3 |
SIGC54T60R3
Edited by INFINEON Technologies AI PS DD CLS, L7581A, Edition 1, 09.06.2004
MAXIMUM RATINGS
:
Parameter
Symbol
Value
Unit
Collector-emitter voltage,
T
j=25
°
C
V
CE
600
V
DC collector current, limited by T
jmax
I
C
1 )
A
Pulsed collector current, t
p
limited by T
jmax
I
cpuls
300
A
Gate emitter voltage
V
GE
±
20
V
Operating junction and storage temperature
T
j
, T
stg
-40 ... +175
°C
SC data, V
GE
= 15V, V
CC
= 360V, Tvj = 150°C
1 )
depending on thermal properties of assembly
t
p
5
μs
STATIC CHARACTERISTICS (tested on chip)
,
T
j=25
°
C, unless otherwise specified
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
=0V , I
C
= 4mA
600
Collector-emitter saturation voltage
V
CE(sat)
V
GE
=15V, I
C
=100A
1.05
1.45
1.85
Gate-emitter threshold voltage
V
GE(th)
I
C
=1600μA , V
GE
=V
CE
tbd
5.8
tbd
V
Zero gate voltage collector current
I
CES
V
CE
=600V , V
GE
=0V
270
μA
Gate-emitter leakage current
I
GES
V
CE
=0V , V
GE
=20V
600
nA
Integrated gate resistor
ELECTRICAL CHARACTERISTICS
(verified by design/characterization):
R
Gint
2
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
Input capacitance
C
iss
tbd
Output capacitance
C
oss
tbd
Reverse transfer capacitance
SWITCHING CHARACTERISTICS
(verified by design/characterization), inductive load
C
rss
V
CE
=25V,
V
GE
=0V,
f
=1MHz
tbd
nF
Value
2)
typ.
tbd
Parameter
Symbol
Conditions
min.
max.
Unit
Turn-on delay time
t
d(on)
Rise time
t
r
tbd
Turn-off delay time
t
d(off)
tbd
Fall time
t
f
T
j
=125
°
C
V
CC
=300V,
I
C
=100A,
V
GE
=-15/15V,
R
G
= tbd
tbd
ns
2)
values also influenced by parasitic L- and C- in measurement and package.
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