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參數(shù)資料
| 型號： | SIHF830-E3 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | JFETs |
| 英文描述： | 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 201K |
| 代理商： | SIHF830-E3 |
www.vishay.com
2
Document Number: 91063
S11-0506-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
IRF830, SiHF830
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle
2 %.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
R
thJA
R
thCS
R
thJC
-
62
°C/W
Case-to-Sink, Flat, Greased Surface
0.50
-
Maximum Junction-to-Case (Drain)
-
1.7
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 20 V
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
V
DS
= 50 V, I
D
= 2.7 A
b
500
-
-
V
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
V
DS
/T
J
V
GS(th)
I
GSS
-
0.61
-
V/°C
2.0
-
4.0
V
Gate-Source Leakage
-
-
± 100
nA
Zero Gate Voltage Drain Current
I
DSS
-
-
25
μA
-
-
250
Drain-Source On-State Resistance
R
DS(on)
g
fs
I
D
= 2.7 A
b
-
-
1.5
-
Forward Transconductance
2.5
-
S
Dynamic
Input Capacitance
C
iss
C
oss
C
rss
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
-
610
-
pF
Output Capacitance
-
160
-
Reverse Transfer Capacitance
-
68
-
Total Gate Charge
Q
g
V
GS
= 10 V
I
D
= 3.1 A, V
DS
= 400 V,
see fig. 6 and 13
b
-
-
38
nC
Gate-Source Charge
Q
gs
-
-
5.0
Gate-Drain Charge
Q
gd
-
-
22
Turn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 250 V, I
D
= 3.1 A
R
g
= 12
, R
D
= 79
, see fig. 10
b
-
8.2
-
ns
Rise Time
-
16
-
Turn-Off Delay Time
-
42
-
Fall Time
-
16
-
Internal Drain Inductance
L
D
Between lead,
6 mm (0.25") from
package and center of
die contact
-
4.5
-
nH
Internal Source Inductance
L
S
-
7.5
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
-
-
4.5
A
Pulsed Diode Forward Current
a
I
SM
-
-
18
Body Diode Voltage
V
SD
t
rr
Q
rr
t
on
T
J
= 25 °C, I
S
= 4.5 A, V
GS
= 0 V
b
-
-
1.6
V
Body Diode Reverse Recovery Time
T
J
= 25 °C, I
F
= 3.1 A, dI/dt = 100 A/μs
b
-
320
640
ns
Body Diode Reverse Recovery Charge
-
1.0
2.0
μC
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
D
S
G
S
D
G
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