參數(shù)資料
型號： SIPC42S2N08
廠商： INFINEON TECHNOLOGIES AG
英文描述： OptiMOS Chip data sheet
中文描述： 的OptiMOS芯片數(shù)據(jù)表
文件頁數(shù)： 2/5頁
文件大小： 90K
代理商： SIPC42S2N08
Infineon AG, AI AP APE
, Informations #184R
2002-02-01
2
SIPC42S2N08
Preliminary data
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V,
I
D
=1mA
Gate threshold voltage,
V
GS
=
V
DS
I
D
= 250 μA
Zero gate voltage drain current
V
(BR)DSS
75
-
-
V
V
GS(th)
2.1
3
4
V
DS
=75V,
V
GS
=0V,
T
j
=25°C
V
DS
=75V,
V
GS
=0V, 125°C,
1)
Gate-source leakage current
I
DSS
-
-
0.01
1
1
100
μA
V
GS
=20V,
V
DS
=0V
On-state resistance
1)
I
GSS
-
1
100
nA
V
GS
=10V,
I
D
=134A
R
DS(on)
-
3.7
4.2
m
Dynamic Characteristics
1)
Gate to source charge
V
DD
=60V,
I
D
=80A
Gate to drain charge
Q
gs
-
27
36
nC
V
DD
=60V,
I
D
=80A
Gate charge total
Q
gd
-
82
123
V
DD
=60V,
I
D
=80A,
V
GS
=0 to 10V
Q
g
-
189
251
Reverse Diode
1)
Inverse diode forward voltage
V
GS
=0V,
I
F
=80A
V
SD
-
0.9
1.3
V
1Defined by design. Not subject to production test.
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