- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄376354 > SKP02N120 (INFINEON TECHNOLOGIES AG) Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode PDF資料下載
參數(shù)資料
| 型號(hào)： | SKP02N120 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode |
| 中文描述： | 快速I(mǎi)GBT在不擴(kuò)散核武器條約與軟，恢復(fù)快反平行快恢復(fù)二極管技術(shù) |
| 文件頁(yè)數(shù)： | 1/13頁(yè) |
| 文件大?。?/td> | 397K |
| 代理商： | SKP02N120 |
當(dāng)前第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)
SKP02N60
SKB02N60
1
Jul-02
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
75% lower
E
off
compared to previous generation
combined with low conduction losses
Short circuit withstand time – 10
μ
s
Designed for:
- Motor controls
- Inverter
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Very soft, fast recovery anti-parallel EmCon diode
http://www.infineon.com/igbt/Type
V
CE
I
C
V
CE(sat
)
T
j
Package
Ordering Code
SKP02N60
600V
2A
2.2V
150
°
C
TO-220AB
Q67040-S4214
SKB02N60
TO-263AB
Q67040-S4215
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
600V,
T
j
≤
150
°
C
Diode forward current
T
C
= 25
°
C
T
C
= 100
°
C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
1)
V
GE
= 15V,
V
CC
≤
600V,
T
j
≤
150
°
C
Power dissipation
T
C
= 25
°
C
Operating junction and storage temperature
V
CE
I
C
600
V
A
6.0
2.9
I
Cpuls
-
12
12
I
F
6.0
2.9
I
Fpuls
V
GE
t
SC
12
±
20
10
V
μ
s
P
tot
30
W
T
j
,
T
stg
-55...+150
°
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
P-TO-220-3-1
(TO-220AB)
P-TO-263-3-2 (D2-PAK)
(TO-263AB)
G
C
E
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SKB02N120 | Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode |
| SKW07N120 | Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode |
| SLA24C01-D | The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
| SLA24C01-S | The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
| SLA24C02-D | The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SKP02N120XKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 6.2A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 1200V 6.2A 62W TO220-3 |
| SKP02N60 | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 2A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SKP02N60XKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 6A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 6A 30W TO220-3 |
| SKP04N60 | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 4A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SKP04N60 | 制造商:Infineon Technologies AG 功能描述:IGBT FAST |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。