參數(shù)資料
型號(hào)： SKP02N120
廠商： INFINEON TECHNOLOGIES AG
英文描述： Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
中文描述： 快速I(mǎi)GBT在不擴(kuò)散核武器條約與軟，恢復(fù)快反平行快恢復(fù)二極管技術(shù)
文件頁(yè)數(shù)： 3/13頁(yè)
文件大?。?/td> 397K
代理商： SKP02N120
SKP02N60
SKB02N60
3
Jul-02
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
20
13
259
52
0.036
0.028
0.064
24
16
311
62
0.041
0.036
0.078
ns
T
j
=25
°
C,
V
CC
=400V,
I
C
=2A,
V
GE
=0/15V,
R
G
=118
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
1)
=180nH,
1)
=180pF
mJ
t
rr
t
S
t
F
Q
rr
I
rrm
di
rr
/dt
-
-
-
-
-
-
130
12
118
65
1.9
180
-
-
-
-
-
-
ns
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
nC
A
A/
μ
s
T
j
=25
°
C,
V
R
=200V,
I
F
=2.9A,
di
F
/dt
=200A/
μ
s
Switching Characteristic, Inductive Load,
at
T
j
=150
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
20
14
287
67
0.054
0.043
0.097
24
17
344
80
0.062
0.056
0.118
ns
T
j
=150
°
C
V
CC
=400V,
I
C
=2A,
V
GE
=0/15V,
R
G
=118
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
1)
=180nH,
1)
=180pF
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
rr
t
S
t
F
Q
rr
I
rrm
di
rr
/dt
-
-
-
-
-
-
150
19
131
150
3.8
200
-
-
-
-
-
-
ns
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
nC
A
A/
μ
s
T
j
=150
°
C
V
R
=200V,
I
F
=2.9A,
di
F
/dt
=200A/
μ
s
1)
Leakage inductance
L
σ
and Stray capacity
C
σ
due to dynamic test circuit in Figure E.
相關(guān)PDF資料
PDF描述
SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
SKW07N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
SLA24C01-D The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
SLA24C01-S The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
SLA24C02-D The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SKP02N120XKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 6.2A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 1200V 6.2A 62W TO220-3
SKP02N60 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 2A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SKP02N60XKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 6A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 6A 30W TO220-3
SKP04N60 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 4A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SKP04N60 制造商:Infineon Technologies AG 功能描述:IGBT FAST
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