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參數(shù)資料
| 型號(hào)： | SM12T3G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 300 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB |
| 封裝： | LEAD FREE, PLASTIC, CASE 318-08, TO-236, 3 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 60K |
| 代理商： | SM12T3G |
SM05T1 Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation @ 20
ms (Note 1)
@ TL ≤ 25°C
Ppk
300
Watts
IEC 6100042 (ESD)
Air
Contact
±15
±8.0
kV
IEC 6100044 (EFT)
40
A
IEC 6100045 (Lightening)
12
A
Derate above 25
°C
°PD°
225
1.8
°mW°
mW/
°C
Thermal Resistance Junction to Ambient
RθJA
556
°C/W
Derate above 25
°C
°PD°
300
2.4
°mW
mW/
°C
Thermal Resistance Junction to Ambient
RθJA
417
°C/W
Junction and Storage Temperature Range
TJ, Tstg
55 to +150
°C
Lead Solder Temperature Maximum (10 Second Duration)
TL
260
°C
1. Nonrepetitive current pulse per Figure 3
2. FR5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
*Other voltages may be available upon request
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
QVBR
Maximum Temperature Coefficient of VBR
IF
Forward Current
VF
Forward Voltage @ IF
ZZT
Maximum Zener Impedance @ IZT
IZK
Reverse Current
ZZK
Maximum Zener Impedance @ IZK
UniDirectional TVS
IPP
IF
V
I
IR
IT
VRWM
VC VBR
VF
ELECTRICAL CHARACTERISTICS
Device
Marking
VRWM
IR @ VRWM
VBR, Breakdown Voltage
IT
VC @
IPP =
1 Amp
Max IPP
(Note 4)
Typical
Capacitance
(Volts)
(pF)
(Volts)
(
mA)
Min
Max
mA
(Volts)
(Amps)
Pin 1 to 3
@ 0 Volts
SM05T1, G
05M
5
10
6.2
7.3
1.0
9.8
17
225
SM12T1, G
12M
12
1.0
13.3
15.75
1.0
19
12
95
4. 8
× 20 ms pulse waveform per Figure 3
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