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參數(shù)資料
| 型號(hào)： | SM12T3G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 300 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB |
| 封裝： | LEAD FREE, PLASTIC, CASE 318-08, TO-236, 3 PIN |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 60K |
| 代理商： | SM12T3G |
SM05T1 Series
http://onsemi.com
3
TYPICAL CHARACTERISTICS
0.1
10
Figure 1. NonRepetitive Peak Pulse Power
versus Pulse Time
1
tp, PULSE DURATION (ms)
100
1000
1
0.1
0.01
Figure 2. Steady State Power Derating Curve
P
PP
,PEAK
PULSE
POWER
(kW)
0
25
50
75
100
125
150
175
300
250
200
150
100
50
0
TEMPERATURE (
°C)
FR5 BOARD
ALUMINA SUBSTRATE
P
D
,POWER
DISSIP
A
TION
(mW)
100
Figure 3. 8
× 20 ms Pulse Waveform
Figure 4. Typical Diode Capacitance (SM05)
01
5
24
250
130
90
BIAS VOLTAGE (VOLTS)
90
80
70
60
50
40
30
20
10
0
020
4060
80
t, TIME (
ms)
tP
tr
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8
ms
HALF VALUE IRSM/2 @ 20 ms
%
OF
PEAK
PULSE
CURRENT
PEAK VALUE IRSM @ 8 ms
C,
CAP
ACIT
ANCE
(pF)
210
170
Figure 5. Typical Diode Capacitance (SM12)
0
158
12
100
90
40
30
20
10
0
BIAS VOLTAGE (VOLTS)
C,
CAP
ACIT
ANCE
(pF)
80
70
60
50
3
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