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參數(shù)資料
| 型號(hào)： | SMFV016 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16M x 8 Bit SmartMedia Card(16M x 8 位 智能媒體卡) |
| 中文描述： | 16米x 8位SmartMedia卡（1,600 × 8位智能媒體卡） |
| 文件頁數(shù)： | 7/24頁 |
| 文件大?。?/td> | 293K |
| 代理商： | SMFV016 |
SMFV016
SmartMedia
TM
7
MODE SELECTION
NOTE
: 1. X can be V
IL
or V
IH.
2. WP should be biased to CMOS high or CMOS low for standby.
CLE
ALE
CE
WE
RE
WP
Mode
H
L
L
H
X
Read Mode
Command Input
L
H
L
H
X
Address Input(3clock)
H
L
L
H
H
Write Mode
Command Input
L
H
L
H
H
Address Input(3clock)
L
L
L
H
H
Data Input
L
L
L
H
X
sequential Read & Data Output
L
L
L
H
H
X
During Read(Busy)
X
X
X
X
X
H
During Program(Busy)
X
X
X
X
X
H
During Erase(Busy)
X
X
(1)
X
X
X
L
Write Protect
X
X
H
X
X
0V/V
CC
(2)
Stand-by
CAPACITANCE
(
T
A
=25
°
C, V
CC
=3.3V, f=1.0MHz)
NOTE
: Capacitance is periodically sampled and not 100% tested.
Item
Symbol
Test Condition
Min
Max
Unit
Input/Output Capacitance
C
I/O
V
IL
=0V
-
10
pF
Input Capacitance
C
IN
V
IN
=0V
-
10
pF
VALID BLOCK
NOTE
:
1. The SMFV016 may or may not include bad blocks. Bad blocks are defined as blocks that contain one or more bad bits. Do not try to access these bad
blocks for program and erase. The Minimum valid blocks are guaranteed for 10 years data retention or 1M program erase cycling. (Refer to the
attached technical notes)
Parameter
Symbol
Min
Typ.
Max
Unit
Valid Block Number
N
VB
1004
-
1024
Blocks
Program/Erase Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Program Time
t
PROG
-
200
500
μ
s
Number of Partial Program Cycles in the Same Page
Nop
-
-
10
cycles
Block Erase Time
t
BERS
-
2
3
ms
AC TEST CONDITION
(T
A
=0 to 55
°
C, V
CC
=2.7V~3.6V unless otherwise noted)
Parameter
Value
Input Pulse Levels
0.4V to 2.4V
Input Rise and Fall Times
5ns
Input and Output Timing Levels
1.5V
Output Load (3.0V +/-10%)
1 TTL GATE and CL=50pF
Output Load (3.3V +/-10%)
1 TTL GATE and CL=100pF
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