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參數(shù)資料
| 型號： | SP708TEU |
| 英文描述： | +3.0V/+3.3V Low Power Microprocessor Supervisory Circuits |
| 中文描述： | 3.0V / 3.3V低功耗微處理器監(jiān)控電路 |
| 文件頁數(shù)： | 2/18頁 |
| 文件大小： | 213K |
| 代理商： | SP708TEU |
2
Rev. 10-17-00 SP706 +3.0/ +3.3 Low Power Microprocessor Circuits Copyright 2000 Sipex Corporation
SPECIFICATIONS
V
= 2.7V to 5.5V for SP70_P/R, V
CC
= 3.0 to 5.5V for SP70_S, V
CC
= 3.15V to 5.5V for SP70_T, T
A
= T
MIN
to T
MAX
to T
MAX
, unless otherwise noted,
typical at 25
°
C.
R
E
T
E
M
A
R
A
P
.
N
I
M
.
P
Y
T
V
,
g
n
a
R
e
g
a
V
g
n
p
O
C
C
0
ABSOLUTE MAXIMUM RATINGS
These are stress ratings only and functional operation
of the device at these ratings or any other above those
indicated in the operation sections of the specifications
below is not implied. Exposure to absolute maximum
rating conditions for extended periods of time may
affect reliability.
Terminal Voltage (with respect to GND):
V
........................................................-0.3V to +6.0V
All Other Inputs (Note 1)..............-0.3V to (V
CC
+3.0V)
Input Current:
V
.....................................................................20mA
GND...................................................................20mA
Output Current (all outputs)...............................20mA
ESD Rating...........................................................2kV
.
X
A
M
5
S
T
N
V
U
S
N
O
I
D
N
O
C
I
d
h
e
C
e
T
y
p
t
s
u
e
S
R
Y
L
P
P
U
S
5
2
0
4
μ
A
V
0
0
0
=
7
7
7
R
P
P
P
e
N
e
N
M
S
S
S
C
P
S
T
C
g
n
o
I
D
W
,
n
o
r
R
/
s
5
5
0
5
8
0
3
3
8
6
9
0
2
2
0
0
5
7
0
1
V
_
_
_
2
2
s
e
y
H
d
h
W
t
V
V
V
V
t
V
V
V
V
m
i
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e
e
T
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p
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e
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R
R
0
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V
s
m
m
t
a
V
S
R
g
0
4
1
0
0
8
2
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e
p
H
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V
x
8
C
C
V
C
C
5
3
4
V
V
V
5
5
)
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A
M
(
T
S
R
V
V
<
<
<
<
C
C
I
V
I
V
6
<
6
<
V
V
E
2
=
8
=
m
2
C
R
U
O
S
0
0
5
mA
0
μ
A
A
=
μ
A
)
X
A
V
V
M
<
<
(
T
V
V
S
R
C
C
K
N
I
S
C
C
I
I
5
5
E
C
=
R
U
O
S
0
C
C
K
N
I
S
e
g
p
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T
E
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R
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t
o
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C
C
6
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C
C
5
3
4
2
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V
V
5
5
V
V
L
)
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A
M
(
T
S
R
V
V
<
<
<
<
C
C
I
V
I
V
6
<
6
<
V
V
E
C
R
U
O
S
5
m
1
2
=
=
0
μ
A
A
)
X
A
V
V
M
<
<
6
<
4
=
(
T
V
V
S
R
C
C
E
8
2
C
R
=
=
U
O
S
2
0
μ
A
m
C
C
I
I
5
5
E
C
R
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O
S
C
C
V
E
C
R
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S
A
t
o
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e
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o
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n
D
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c
W
D
W
W
D
W
0
0
5
0
6
5
s
C
C
I
P
W
0
s
n
V
,
V
H
I
V
x
8
=
C
C
,
h
V
L
V
H
I
V
L
V
H
I
t
e
C
s
V
x
7
C
C
5
1
6
8
V
V
V
V
V
W
)
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A
M
(
T
S
R
V
V
<
V
V
r
<
C
C
V
V
6
<
6
<
T
S
R
)
X
A
M
0
=
0
=
=
I
(
C
C
C
C
C
D
C
t
p
n
D
W
2
0
1
μ
A
V
0
C
C
Continuous Power Dissipation
Plastic DIP
(derate 9.09mW/
O
C above +70
O
C)..................727mW
SO
(derate 5.88mW/
O
C above +70
O
C)..................471mW
Mini SO
(derate 4.10mW/
O
C above +70
O
C)..................330mW
Storage Temperature Range.............-65C to +160C
Lead Temperature (solding 10 sec)................+300C
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