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參數(shù)資料
| 型號： | SPD10N10 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | CAP 470PF 200V 10% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 |
| 中文描述： | SIPMOS功率晶體管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 125K |
| 代理商： | SPD10N10 |
SPD 10N10
Data Sheet
2
05.99
Thermal Characteristics
Parameter
Values
typ.
Symbol
Unit
max.
min.
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJC
R
thJA
R
thJA
-
-
-
-
-
-
-
3.1
100
75
50
K/W
Electrical Characteristics
, at
T
j = 25 C, unless otherwise specified
Parameter
Symbol
Unit
Values
typ.
min.
max.
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA
Gate threshold voltage,
V
GS
=
V
DS
I
D
= 1 mA
Zero gate voltage drain current
V
DS
= 100 V,
V
GS
= 0 V,
T
j
= 25 C
V
DS
= 100 V,
V
GS
= 0 V,
T
j
= 125 C
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-state resistance
V
GS
= 10 V,
I
D
= 6 A
-
V
(BR)DSS
100
-
V
V
GS(th)
4
3
2.1
-
-
I
DSS
μA
1
100
0.1
-
I
GSS
-
10
nA
100
R
DS(on)
-
0.15
0.2
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70μm thick) copper area for drain
connection. PCB is vertical without blown air.
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